Title:
SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2017188562
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a technology for suppressing increase in a gate threshold of a switching element.SOLUTION: A trench is formed, a second conductivity type impurity is injected in a direction where a perpendicular rising on a top face of a semiconductor substrate is inclined around an axis extending in a width direction of the trench, to a bottom face of the trench and a side face in a length direction, and a first conductivity type impurity is injected in a direction where the perpendicular is inclined around an axis extending in the length direction of the trench. The second conductivity type impurity injected to a side face in the width direction of the trench in an injection step of the second conductivity type impurity is cancelled by the first conductivity type impurity injected to the side face in the width direction of the trench in the injection step of the first conductivity type impurity, thereby suppressing increase in a gate threshold.SELECTED DRAWING: Figure 8
Inventors:
ISHIMABUSE HISASHI
URAGAMI YASUSHI
YAMASHITA YUSUKE
URAGAMI YASUSHI
YAMASHITA YUSUKE
Application Number:
JP2016076095A
Publication Date:
October 12, 2017
Filing Date:
April 05, 2016
Export Citation:
Assignee:
TOYOTA MOTOR CORP
DENSO CORP
DENSO CORP
International Classes:
H01L29/78; H01L21/265; H01L21/336; H01L29/12
Attorney, Agent or Firm:
Kaiyu International Patent Office
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