Title:
▲ＩＩＩ−Ｖ▼半導体ナノ結晶の合成方法
Document Type and Number:
Japanese Patent JPH09510947
Kind Code:
A
Abstract:
The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination of mixing a Na/K alloy with an excess of Group VA element (E) in an aromatic solvent to form a (Na/K)3E pnictide, and subsequently mixing the pnictide with a Group IIIA trihalide (MX3) in a coordinating solution to form a suspension that includes the nanocrystalline semiconductor.
Inventors:
ウェルズ，リチャード・エル
カー，シュレヤス・エス
カー，シュレヤス・エス
Application Number:
JP52010595A
Publication Date:
November 04, 1997
Filing Date:
January 23, 1995
Export Citation:
Assignee:
デューク ユニバーシティ
International Classes:
C01G15/00; C01B25/08; C01G28/00; C01G30/00; C30B7/00; C30B7/02; C30B29/40; (IPC1-7): C30B29/40; C01B25/08; C01G15/00; C01G28/00; C01G30/00; C30B7/00; C30B7/02
Attorney, Agent or Firm:
湯浅 恭三 （外６名）