Title:
低蒸気圧のガス前駆体を用いて基板上にフィルムを蒸着させるシステム
Document Type and Number:
Japanese Patent JP2005523384
Kind Code:
A
Abstract:
A method for depositing a film onto a substrate is provided. The substrate is contained within a reactor vessel at a pressure of from about 0.1 millitorr to about 100 millitorr. The method comprises subjecting the substrate to a reaction cycle comprising i) supplying to the reactor vessel a gas precursor at a temperature of from about 20° C. to about 150° C. and a vapor pressure of from about 0.1 torr to about 100 torr, wherein the gas precursor comprises at least one organo-metallic compound; and ii) supplying to the reactor vessel a purge gas, an oxidizing gas, or combinations thereof.
More Like This:
| JP5755958 | Raw material gas supply equipment for semiconductor manufacturing equipment |
| JP2006022359 | RAW MATERIAL FEEDER |
| JP3529731 | Steamy carrier system |
Inventors:
Cell Breed Stephen Sea
Zucker Martin
Venturo Vincent
Zucker Martin
Venturo Vincent
Application Number:
JP2003586389A
Publication Date:
August 04, 2005
Filing Date:
April 14, 2003
Export Citation:
Assignee:
Mattson Technology Incorporated
International Classes:
C23C16/448; C23C16/40; C23C16/455; H01L21/316; H01L21/8242; H01L27/108; C23C16/44; (IPC1-7): C23C16/448; H01L21/316; H01L21/8242; H01L27/108
Domestic Patent References:
| JPH07252660A | 1995-10-03 | |||
| JPH03104871A | 1991-05-01 | |||
| JPH08264459A | 1996-10-11 | |||
| JP2001250823A | 2001-09-14 | |||
| JP2002541332A | 2002-12-03 | |||
| JPH04500502A | 1992-01-30 | |||
| JPH08186077A | 1996-07-16 | |||
| JP2000505152A | 2000-04-25 |
Other References:
JPN6009026378, Ｇ． Ｓ． Ｈｉｇａｓｈｉ ａｎｄ Ｃ． Ｇ． Ｆｌｅｍｉｎｇ, "Ｓｅｑｕｅｎｔｉａｌ ｓｕｒｆａｃｅ ｃｈｅｍｉｃａｌ ｒｅａｃｔｉｏｎ ｌｉｍｉｔｅｄ ｇｏｗｔｈ ｏｆ ｈｉｇｈ ｑｕａｌｉｔｙ Ａｌ２Ｏ３ ｄｉｅｌｅｃｔｒｉｃｓ", Ａｐｐｌ． Ｐｈｙｓ． Ｌｅｔｔ．, 19891106, Ｖｏｌ． ５５， Ｎｏ． １９, ｐｐ． １９６３−１９６５, US, Ａｍｅｒｉｃａｎ Ｉｎｓｔｉｔｕｔｅ ｏｆ Ｐｈｙｓｉｃｓ
Attorney, Agent or Firm:
Sadao Kumakura
Fumiaki Otsuka
Toshio Imajo
Takaki Nishijima
Fumiaki Otsuka
Toshio Imajo
Takaki Nishijima