Title:
A thermoelectrical conversion device and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6152262
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a thermoelectric conversion device which can enhance thermoelectric conversion efficiency while including film p-type metal oxide semiconductor element and n-type metal oxide semiconductor element, and to provide a manufacturing method therefor.SOLUTION: In a thermoelectric conversion device 10 including a substrate 11, p-type metal oxide semiconductor elements 12a-12c and n-type metal oxide semiconductor elements 13a-13c arranged on the surface of the substrate 11 and connected in series, the p-type metal oxide semiconductor elements 12a-12c and n-type metal oxide semiconductor elements 13a-13c are film elements, the n-type metal oxide semiconductor elements 13a-13c are formed by spray coating, and have a porosity of 5% or less.
Inventors:
Extended land
Daishiro Nomura
Hideaki Nagayoshi
Daishiro Nomura
Hideaki Nagayoshi
Application Number:
JP2012259986A
Publication Date:
June 21, 2017
Filing Date:
November 28, 2012
Export Citation:
Assignee:
Fujiko Co., Ltd.
International Classes:
H01L35/34; H01L35/22; H01L35/32; H02N3/00
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Foreign References:
| WO2012002509A1 |
Attorney, Agent or Firm:
Fujio Nakamae
Fujimoto Katsune
Yoshihiro Kurita
Takayuki Imanaka
Yohei Kiyoi
Fujimoto Katsune
Yoshihiro Kurita
Takayuki Imanaka
Yohei Kiyoi
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