Title:
埋設接触子を有する薄膜多層太陽電池
Document Type and Number:
Japanese Patent JPH09511102
Kind Code:
A
Abstract:
PCT No. PCT/AU95/00184 Sec. 371 Date Aug. 28, 1996 Sec. 102(e) Date Aug. 28, 1996 PCT Filed Mar. 31, 1995 PCT Pub. No. WO95/27314 PCT Pub. Date Oct. 12, 1995A multilayer solar cell structure includes a stack of alternating p-type and n-type semiconductor layers arranged to form a plurality of rectifying photovoltaic junctions. Low-cost cells are manufactured from low-quality material which is optimized by employing very high doping levels in thin layers. Typically, the doping levels are greater than 1017 atoms/cm3, and the thickness of the layers is related to carrier diffusion length in thickness. Contact is made to underlying layers by way of a buried contact structure comprising grooves extending down through all of the active layers, the walls of each groove being doped with n- or p-type impurities depending upon the layers to which the respective contact is to be connected and the grooves being filled or partly filled with metal contact material.
Inventors:
ウェンハム スチュアート ロス
グリーン マーチン アンドルー
グリーン マーチン アンドルー
Application Number:
JP52530395A
Publication Date:
November 04, 1997
Filing Date:
March 31, 1995
Export Citation:
Assignee:
パシフィック ソーラー ピーティーワイ リミテッド
International Classes:
H01L31/0224; H01L31/0352; H01L31/04; H01L31/06; (IPC1-7): H01L31/04; H01L31/04
Attorney, Agent or Firm:
吉田 研二 （外２名）