Title:
A thin film transistor switch and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6279086
Kind Code:
B2
Abstract:
A thin-film transistor (TFT) switch includes a gate, a drain, a source, a semiconductor layer, and a fourth electrode. The drain is connected to a first signal. The gate is connected to a control signal to control the switch on or off. The source outputs the first signal when the switch turns on. The fourth electrode and the gate are respectively located at two sides of the semiconductor layer. The fourth electrode is conductive and is selectively coupled to different voltage levels, thereby reducing leakage current in a channel to improve switch characteristic when the switch turns off.
Inventors:
Du Peng
Chen Masako
Chen Masako
Application Number:
JP2016539383A
Publication Date:
February 14, 2018
Filing Date:
September 13, 2013
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
International Classes:
H01L29/786; H01L21/822; H01L27/04
Domestic Patent References:
| JP2011119671A | ||||
| JP2007072438A | ||||
| JP2006253490A | ||||
| JP2012069932A | ||||
| JP2012019682A | ||||
| JP2001284592A | ||||
| JP2003273228A | ||||
| JP9148582A | ||||
| JP11214698A | ||||
| JP2011187949A |
Attorney, Agent or Firm:
Yoneda Koichiro
Seishiro Suzuki
Seishiro Suzuki