Title:
A thin silicon solar cell and a manufacturing method
Document Type and Number:
Japanese Patent JP6083082
Kind Code:
B2
Abstract:
A method of fabricating a solar cell is disclosed. The method includes the steps of forming a sacrificial layer on a silicon substrate, forming a doped silicon layer atop the sacrificial substrate, forming a silicon film atop the doped silicon layer, forming a plurality of interdigitated contacts on the silicon film, contacting each of the plurality of interdigitated contacts with a metal contact, and removing the sacrificial layer.
Inventors:
Rim, sumbham
Moses, Michael
Kim, Tae Suk
Kudozhnovic, Michael Jay
Moses, Michael
Kim, Tae Suk
Kudozhnovic, Michael Jay
Application Number:
JP2014502627A
Publication Date:
February 22, 2017
Filing Date:
March 19, 2012
Export Citation:
Assignee:
Sunpower corporation
International Classes:
H01L31/068; H01L31/18
Domestic Patent References:
| JP2001118758A | ||||
| JP51123591A | ||||
| JP2006310389A | ||||
| JP2001044463A | ||||
| JP2005101630A | ||||
| JP2003152207A | ||||
| JP4027169A |
Foreign References:
| US7468485 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation
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