PURPOSE: To lower the voltage to be applied for blowing fuses in an integrated circuit by forming a high-melting-point metal silicide layer where parasitic resistors may appear.

CONSTITUTION: A semiconductor fuse element in an integrated circuit has a polysilicon film 2, an N+ type polysilicon 3, an N-type polysilicon fuse 4, a silicon oxide film 5 and aluminum wirings 6, 7 on a silicon substrate 1. In this case, a titanium silicide layer 8 of compound of high-melting-point metal titanium and the N+ type polysilicon is formed on the polysilicon 3. The layer 8 has a sheet resistance value of about 3Ω, about 1/10 of that of the polysilicon 3, and hence a voltage drop of the polysilicon 3 can be suppressed as much as possible even if a pattern is miniaturized in the case of high integration, and a voltage necessary in the case of melting the fuse can be lowered.