The training method of a silicon single crystal

Japanese Patent JP6044530

B2

A method for growing a silicon single crystal using a single crystal growing device which is provided with a water-cooled body that encloses a growing single crystal and which is provided with a thermal shield that surrounds an outer peripheral face and lower end face of the water-cooled body, the method comprising, when growing a single crystal with a radius of Rmax(mm), pulling the single crystal under a condition which satisfies formula (A) in a range of 0