Title:
トランジスタ
Document Type and Number:
Japanese Patent JP7439208
Kind Code:
B2
Abstract:
A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.
Inventors:
Yuta Endo
Toshinari Sasaki
Kosei Noda
Toshinari Sasaki
Kosei Noda
Application Number:
JP2022164171A
Publication Date:
February 27, 2024
Filing Date:
October 12, 2022
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786
Domestic Patent References:
| JP2008112909A | ||||
| JP2007250983A | ||||
| JP2010157702A | ||||
| JP2009008890A | ||||
| JP2010166030A | ||||
| JP2010093070A | ||||
| JP2010171404A |