Title:
SEMICONDUCTOR LASER DEVICE
Document Type and Number:
Japanese Patent JP2555960
Kind Code:
B2
Abstract:
PURPOSE: To increase monitoring current by a method wherein a semiconductor laser is provided with a semiconductor laser element formed with an antireflection film on its end surface other than the part of an active layer, which is a laser oscillation region.
CONSTITUTION: A semiconductor laser is constituted into a structure, wherein a semiconductor laser element 2 is mounted on a heat sink 5 installed on a stem 9, a high- reflection coating is formed on the part only of an active layer 7 on the end surface, which is positioned on the side of a photodetector 12, of the element 2 and an antireflection film 2 is applied on the end surface other than the part of the layer 7. A laser beam from the outside is emitted through the end part of a pigtail 6 and is condensed in the vicinity of the layer 7 on the front surface of the element 2 by a lens 4. The condensed laser beam is transmitted an InP film on the periphery of the layer 7 and reaches the rear surface of the element 2. The film 3 is formed on the end surface other than the part of the layer 7 within the rear surface. Accordingly, the transmittance of the laser beam from the interior of the element 2 is high, the amount of the transmitted beam of the laser beam is increase more than that at the time when the high-reflection coating is formed on the whole end surface of the element 2 and monitoring current can be significantly increased.
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Inventors:
YOSHINO TAKASHI
Application Number:
JP29465293A
Publication Date:
November 20, 1996
Filing Date:
October 29, 1993
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
G02B6/32; G02B6/42; H01S5/00; H04B10/00; H04B10/07; (IPC1-7): H01S3/18; G02B6/32; G02B6/42; H04B10/24
Attorney, Agent or Firm:
Hiroo Suzuki