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Title:
WASTE LIQUID TREATMENT METHOD AND WASTE LIQUID TREATMENT APPARATUS
Document Type and Number:
Japanese Patent JP2016207686
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a waste liquid treatment method and a waste liquid treatment apparatus capable of removing metal contained in a chemical solution and regenerating the chemical solution.SOLUTION: In a substrate treatment unit 10, the surface treatment of the semiconductor substrate W with the chemical solution is performed. The chemical solution in which the metal is dissolved by the substrate treatment is discharged to the storage tank 20 and stored. The polyacid supply unit 30 supplies a polyacid of a defect type complex having a defective site to the storage tank 20. By mixing a polyacid of a defect type complex having a defective site in a used chemical solution containing metal and adjusting the pH value of the mixed solution to 2 to 3, the metal dissolved in the chemical solution at the defective site of the polyacid is incorporated. Furthermore, by charging the counter cation and precipitating the polyacid incorporating the metal and separating it from the chemical solution, it is possible to regenerate the chemical solution by removing the metal contained in the chemical solution during treatment of the semiconductor substrate W.SELECTED DRAWING: Figure 1

Inventors:
HIGUCHI AYUMI
Application Number:
JP2015083238A
Publication Date:
December 08, 2016
Filing Date:
April 15, 2015
Export Citation:
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Assignee:
SCREEN HOLDINGS CO LTD
International Classes:
H01L21/306
Domestic Patent References:
JP2013051305A2013-03-14
JP2006509616A2006-03-23
Foreign References:
US20050159307A12005-07-21
Other References:
YAVARI, R. ET AL.: "Synthesis, Ion Exchange Properties, and Applications of Amorphous Cerium(III) Tungstosilicate", SEPERATION SCIENCE AND TECHNOLOGY, vol. Volume 43, Number 15, JPN6016018697, 16 December 2008 (2008-12-16), US, pages 3920 - 3935
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita