Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
WIDE-BANDGAP SEMICONDUCTOR DEVICE WITH TRENCH GATE STRUCTURES
Document Type and Number:
Japanese Patent JP2017220667
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a wide-bandgap semiconductor device with trench gate structures.SOLUTION: A semiconductor device includes trench gate structures extending from a first surface into a semiconductor body made of a wide-bandgap semiconductor material. The trench gate structures separate mesa portions of the semiconductor body from each other. In the mesa portions, body regions form first pn junctions with a drain structure and directly adjoin first mesa sidewalls. Source regions in the mesa portions form second pn junctions with the body regions, where the body regions separate the source regions from the drain structure. The source regions directly adjoin the first mesa sidewalls and second mesa sidewalls opposite to the first mesa sidewalls.SELECTED DRAWING: Figure 1A

Inventors:
RALF SIEMIENIEC
THOMAS AICHINGER
WOLFGANG BERGNER
ROMAIN ESTEVE
KARLHEINZ FELDRAPP
DANIEL KUECK
DETHARD PETERS
ROLAND RUPP
CHRISTIAN STRENGER
BERND ZIPPELIUS
Application Number:
JP2017101464A
Publication Date:
December 14, 2017
Filing Date:
May 23, 2017
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
INFINEON TECHNOLOGIES AG
International Classes:
H01L29/78; H01L21/8234; H01L27/06; H01L27/088; H01L29/12
Domestic Patent References:
JP2003017699A2003-01-17
JP2015164224A2015-09-10
JP2015226060A2015-12-14
Foreign References:
WO2016072074A12016-05-12
WO2009122486A12009-10-08
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation