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Title:
(001)-ORIENTATED PEROVSKITE FILM FORMATION METHOD AND DEVICE HAVING PEROVSKITE FILM
Document Type and Number:
WIPO Patent Application WO/2004/079059
Kind Code:
A1
Abstract:
The present invention relates to a device having a ferroelectric film and in particular, to a semiconductor device having ferroelectrics epitaxially grown on a silicon substrate. The device is a capacity element including a (111)-orientated substrate, an epitaxial film having (001)-orientated perovskite structure formed on the substrate, and an electrode formed on the epitaxial film. A method for forming the perovskite type epitaxial film includes a step of epitaxially growing a metal oxide film of halite structure having (001) orientation on a (111)-orientated substrate and a step of epitaxially growing a (001)-orientated metal oxide film having a perovskite structure on the metal oxide film. The present invention enables forming of various functional elements such as a ferroelectric memory, a SAW filter, and a ferroelectric actuator.

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Inventors:
KONDO MASAO (JP)
KURIHARA KAZUAKI (JP)
Application Number:
PCT/JP2003/002516
Publication Date:
September 16, 2004
Filing Date:
March 04, 2003
Export Citation:
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Assignee:
FUJITSU LTD (JP)
KONDO MASAO (JP)
KURIHARA KAZUAKI (JP)
International Classes:
C30B23/02; H01G4/06; H01L21/02; H01L21/28; H01L21/316; H01L21/336; H01L21/822; H01L21/8246; H01L27/04; H01L27/105; H01L27/115; H01L29/51; H01L29/788; H01L29/792; H01L41/09; H01L41/187; H01L41/22; H01L41/316; H01L41/319; H01L41/39; H03H9/02; H01L21/314; (IPC1-7): C30B29/22; H01L21/316; H01L27/10; H01L41/08; H01L41/18; H03H3/08
Foreign References:
US5985404A1999-11-16
US5650362A1997-07-22
US6096434A2000-08-01
Other References:
See also references of EP 1600530A4
Attorney, Agent or Firm:
Itoh, Tadahiko (Yebisu Garden Place Tower 20-3, Ebisu 4-chom, Shibuya-ku Tokyo, JP)
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