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Title:
2.7-3.5 GHZ 2W GAN MONOLITHIC POWER AMPLIFIER AND DESIGN METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2018/006483
Kind Code:
A1
Abstract:
Disclosed are a 2.7-3.5 GHz 2W GaN monolithic power amplifier and a design method thereof. The amplifier comprises an input matching network, an interstage matching network, an output matching network, and a pHEMT transistor. The input matching network is connected to the interstage matching network by means of the pHEMT transistor. The interstage matching network is connected to the output matching network by means of the pHEMT transistor. A gate bias power supply is respectively connected to the input matching network and the interstage matching network. A drain bias power supply is respectively connected to the interstage matching network and the output matching network. The design method addresses the difficulties of designing a modular circuit, is much smaller than a traditional hybrid integrated circuit, determines an optimal load impedance and an optimal source impedance of a chip, provides a circuit diagram associated with the input, output and interstage matching networks, optimizes parameters, including a stability coefficient, an input and output standing wave system, a gain, a power, efficiency and harmonic suppression, and provides a layout for a monolithic microwave power amplifier.

Inventors:
XU HUAN (CN)
Application Number:
PCT/CN2016/096418
Publication Date:
January 11, 2018
Filing Date:
August 23, 2016
Export Citation:
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Assignee:
CHENGDU TIGER MICROWAVE TECH CO LTD (CN)
International Classes:
H03F1/56; H03F3/21
Foreign References:
CN104753470A2015-07-01
CN103178794A2013-06-26
CN103199802A2013-07-10
CN103812458A2014-05-21
US20010002803A12001-06-07
EP2549644A12013-01-23
Attorney, Agent or Firm:
CHENGDU JINYING PATENT FIRM (CN)
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