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Patent Searching and Data


Title:
3-D TRANSFORMER FOR HIGH FREQUENCY APPLICATIONS
Document Type and Number:
WIPO Patent Application WO2006063193
Kind Code:
A3
Abstract:
A stressed metal technology may fabricate high-Q, three-dimensional microelectronic inductors and transformers. The fabrication method may allow the production of inductors and transformers on high-resistivity silicon substrate and with metal deposition of Au and Cr that is fully compatible with semiconductor fabrication technologies. The produced inductors and transformers exhibit Q factors > 60 at frequencies of 3 to 7 GHz. High efficiency, high-Q transformers with coupling factors 0.6

Inventors:
WEON DAEHEE (US)
MOHAMMADI SAEED (US)
JEON JONG-HYEOK (US)
KATEHI LINDA (US)
Application Number:
US2005044536W
Publication Date:
December 28, 2006
Filing Date:
December 07, 2005
Export Citation:
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Assignee:
PURDUE RESEARCH FOUNDATION
WEON, DAEHEE
MOHAMMADI, SAEED
JEON, JONG-HYEOK
KATEHI, LINDA
International Classes:
H01F5/00; H01F7/06; H01F27/28
Foreign References:
US6582989B22003-06-24
US6114937A2000-09-05
US7023315B22006-04-04
US6798039B12004-09-28
US6147582A2000-11-14
US6429764B12002-08-06
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