Title:
3D MEMORY ARRAY AND PREPARATION METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/082403
Kind Code:
A1
Abstract:
A 3D memory array and a preparation method therefor, and an electronic device. The 3D memory array comprises a plurality of vertically stacked memory arrays and a plurality of vertically extending write word lines (120), wherein each memory array comprises a plurality of memory cells, a plurality of read bit lines (330) and a plurality of write bit lines (520), which are all distributed in an array. Each memory cell comprises a first transistor, and a second transistor with a horizontal channel, wherein the first transistor comprises a first gate electrode (11), a first electrode (33), a second electrode (34) and a first semiconductor layer (6); and the second transistor comprises a third electrode (51), a fourth electrode (52), a second gate electrode (12) extending in a direction perpendicular to a substrate (1), and a second semiconductor layer (9) surrounding the second gate electrode (12), the first gate electrode (11) being connected to the second semiconductor layer (9). The second gate electrodes (12) of adjacent memory cells in different layers are connected to the same write word line (120); and the first electrodes (33) of memory cells in the same layer and the same column are connected to the same read bit line (330), and the fourth electrodes (52) of memory cells in the same layer and the same column are connected to the same write bit line (520).
Inventors:
DAI JIN (CN)
YU YONG (CN)
LIANG JING (CN)
YU YONG (CN)
LIANG JING (CN)
Application Number:
PCT/CN2022/138096
Publication Date:
April 25, 2024
Filing Date:
December 09, 2022
Export Citation:
Assignee:
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
H10B12/00; H01L21/336
Foreign References:
| US20130161730A1 | 2013-06-27 | |||
| US20130100741A1 | 2013-04-25 | |||
| US20200227416A1 | 2020-07-16 | |||
| US20210159231A1 | 2021-05-27 | |||
| US20220045060A1 | 2022-02-10 | |||
| US20220068927A1 | 2022-03-03 | |||
| US20220285362A1 | 2022-09-08 |
Attorney, Agent or Firm:
AFD CHINA INTELLECTUAL PROPERTY LAW OFFICE (CN)
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