Title:
3D MEMORY DEVICE WITH TOP WORDLINE CONTACT LOCATED IN PROTECTED REGION DURING PLANARIZATION
Document Type and Number:
WIPO Patent Application WO/2020/248091
Kind Code:
A1
Abstract:
Embodiments of the present disclosure are directed towards a memory device including a top wordline contact located in a region that is protected from erosion during a planarization process, e.g., chemical mechanical polish (CMP). In embodiments, a plurality of wordlines are formed in a stack of multiple layers and a plurality of wordline contacts are formed to intersect with the plurality of wordlines. In embodiments, the stack forms a staircase and each of the plurality of wordline contacts lands on a corresponding each of the wordlines proximate to an edge of the staircase such that a top wordline contact lands in a region on a top wordline previously covered by a sacrificial layer. In some embodiments, the region is proximate to a raised notch at an edge of the staircase. Other embodiments may be described and claimed.
Inventors:
CHAKRAVARTHI NANDA KUMAR (US)
MEYAARD DAVID (US)
TRIPATHI ABHINAV (US)
LIU LIU (CN)
MEYAARD DAVID (US)
TRIPATHI ABHINAV (US)
LIU LIU (CN)
Application Number:
PCT/CN2019/090513
Publication Date:
December 17, 2020
Filing Date:
June 10, 2019
Export Citation:
Assignee:
INTEL CORP (US)
CHAKRAVARTHI NANDA KUMAR (US)
MEYAARD DAVID (US)
TRIPATHI ABHINAV (US)
LIU LIU (CN)
CHAKRAVARTHI NANDA KUMAR (US)
MEYAARD DAVID (US)
TRIPATHI ABHINAV (US)
LIU LIU (CN)
International Classes:
H01L27/11551; H01L27/11575; H01L27/11578
Foreign References:
| US20140191389A1 | 2014-07-10 | |||
| CN107731834A | 2018-02-23 | |||
| US20150115455A1 | 2015-04-30 | |||
| US20180240811A1 | 2018-08-23 | |||
| CN107564916A | 2018-01-09 |
Attorney, Agent or Firm:
CHINA PATENT AGENT (H.K.) LTD. (CN)
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