Title:
ABNORMALITY DETECTION DEVICE FOR SECONDARY BATTERY AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/104885
Kind Code:
A1
Abstract:
Provided is a semiconductor device capable of detecting a micro short circuit of a secondary battery. The semiconductor device comprises: a first source follower; a second source follower; a transistor; a capacitive element; and a comparator. A negative electrode potential and a positive electrode potential of the secondary battery are supplied to the semiconductor device, a first potential is input to the first source follower, and a second potential is input to the second source follower. A signal for controlling the conductive state of the transistor is input to the gate of the transistor, and the output potential of the first source follower related to the potential between the positive electrode and the negative electrode of the secondary battery is sampled. By comparing the sampled potential with the output potential of the second source follower, the comparator can handle secondary batteries in which the potential between the positive electrode and the negative electrode fluctuates due to charging and discharging.
Inventors:
MATSUZAKI TAKANORI (JP)
TAKAHASHI KEI (JP)
ISHIZU TAKAHIKO (JP)
OKAMOTO YUKI (JP)
ITO MINATO (JP)
TAKAHASHI KEI (JP)
ISHIZU TAKAHIKO (JP)
OKAMOTO YUKI (JP)
ITO MINATO (JP)
Application Number:
PCT/IB2019/059650
Publication Date:
May 28, 2020
Filing Date:
November 11, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G01R19/165; G01R31/36; G01R31/50; H01L21/8234; H01L27/088; H01L29/786; H02J7/00
Foreign References:
| JPS61159815A | 1986-07-19 | |||
| JP2014039459A | 2014-02-27 | |||
| JP2005229383A | 2005-08-25 | |||
| JP2015122750A | 2015-07-02 | |||
| JPH09512684A | 1997-12-16 | |||
| JPH08307167A | 1996-11-22 | |||
| JPS5888674A | 1983-05-26 | |||
| JP2009077003A | 2009-04-09 |
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