ABRASIVE FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD FOR POLISHING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE MANUFACTURING METHOD

Title:

ABRASIVE FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD FOR POLISHING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE MANUFACTURING METHOD

Document Type and Number:

WIPO Patent Application WO/2006/098141

Kind Code:

A1

Abstract:

A polishing technology by which a suitable polishing speed rate can be obtained between a polysilicon film and other materials and high planarity of a plane to be polished, including the polysilicon film, can be achieved in the case of polishing the plane to be polished in semiconductor integrated circuit device manufacture. An abrasive which contains cerium oxide particles, water soluble polyamine and water and has a pH within a range of 10-13 is used as an abrasive for chemical mechanical polishing.

Inventors:

YOSHIDA IORI (JP)
KON YOSHINORI (JP)

Application Number:

PCT/JP2006/303647

Publication Date:

September 21, 2006

Filing Date:

February 27, 2006

Export Citation:

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Assignee:

ASAHI GLASS CO LTD (JP)
SEIMI CHEM KK (JP)
YOSHIDA IORI (JP)
KON YOSHINORI (JP)

International Classes:

H01L21/304; B24B37/04; C09K3/14

Foreign References:

JP2002305167A	2002-10-18
EP1416025A1	2004-05-06

Other References: