Title:
ACOUSTIC INDUCTION-TYPE SEMICONDUCTOR ELEMENT AND ACOUSTIC ELEMENT INTEGRATED CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2023/067965
Kind Code:
A1
Abstract:
[Problem] To provide an acoustic induction-type semiconductor element and an acoustic element integrated circuit that can exhibit a high sensitivity even in a case of making the element size smaller. [Solution] This acoustic induction-type semiconductor element comprises: a channel formation region 14 of p-type; first and second main electrode regions 15b, 15a of n type provided on a surface of the channel formation region 14; gate insulating films (12, 16) that overlie the channel formation region 14 sandwiched by the first and second main electrode regions; a main floating electrode 17c that is provided in a floating state over the gate insulating films; fixed-potential electrodes 17o that are located adjacently to the main floating electrode 17c and that are set to a first potential; a vibration film 23 that is opposed to the first and fixed-potential electrodes with the intervention of a vibration cavity; and a vibration electrode 25c that is in contact with the upper surface of the vibration film 23, is opposed to the first and fixed-potential electrodes with the intervention of the vibration cavity, and is set to a second potential.
Inventors:
TADAKI YOSHITAKA (JP)
UMEMURA SHIN-ICHIRO (JP)
OGAYA KAORU (JP)
TAKEMOTO YOSHIAKI (JP)
UMEMURA SHIN-ICHIRO (JP)
OGAYA KAORU (JP)
TAKEMOTO YOSHIAKI (JP)
Application Number:
PCT/JP2022/034796
Publication Date:
April 27, 2023
Filing Date:
September 16, 2022
Export Citation:
Assignee:
MEMS CORE CO LTD (JP)
International Classes:
H04R19/00
Domestic Patent References:
| WO2016194208A1 | 2016-12-08 |
Foreign References:
| JP2004274756A | 2004-09-30 | |||
| JP2018530196A | 2018-10-11 | |||
| JP2017085257A | 2017-05-18 | |||
| JP2005103294A | 2005-04-21 | |||
| JP2004503312A | 2004-02-05 |
Attorney, Agent or Firm:
AMBO Aiko (JP)
Download PDF: