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Title:
ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD OF SAME
Document Type and Number:
WIPO Patent Application WO/2011/040179
Kind Code:
A1
Abstract:
Disclosed are an acoustic wave device and manufacturing method of the same for reducing temperature dependency for the frequency of an acoustic wave device, and reducing variation in TCF during manufacture of acoustic wave devices. A manufacturing method of an acoustic wave device includes a first film formation step (S10) for forming a silicon oxide film; a measurement step (S12) for measuring a value related to stretching vibration of Si-O bonds of the silicon oxide film; and a second film formation step (S18) for forming a silicon oxide film under conditions used in the first film formation step (S10) on a substrate when the value is within a target range.

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Inventors:
MATSUDA SATORU (JP)
MATSUDA TAKASHI (JP)
MIURA MICHIO (JP)
Application Number:
PCT/JP2010/065099
Publication Date:
April 07, 2011
Filing Date:
September 03, 2010
Export Citation:
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Assignee:
TAIYO YUDEN KK (JP)
MATSUDA SATORU (JP)
MATSUDA TAKASHI (JP)
MIURA MICHIO (JP)
International Classes:
H03H3/08; H01L41/09; H01L41/18; H01L41/187; H01L41/22; H01L41/23; H03H9/145; H03H9/64
Domestic Patent References:
WO2008087836A12008-07-24
Foreign References:
JP2003188679A2003-07-04
JP2004055955A2004-02-19
JPH1092814A1998-04-10
JP2002110668A2002-04-12
JP2003203957A2003-07-18
JP2008028980A2008-02-07
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