ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME

Title:

ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME

Document Type and Number:

WIPO Patent Application WO/2007/099742

Kind Code:

A1

Abstract:

A surface acoustic wave in which frequency/temperature characteristics can be improved effectively while the narrowing of a proportional band and the deterioration of insertion loss are not incurred significantly. In the surface acoustic wave device (1), at least one IDT electrode (3) is formed on a piezoelectric substrate (2), and an insulator layer (6) for improving the temperature characteristics is provided to cover the IDT electrode (3). When the surface of the insulator layer (6) is sectioned into a first surface region where the IDT electrode is located below and a second surface region where the IDT electrode is not located below, the height of surface of the insulator layer in at least a part of the second surface region is set to be larger by 0.001λ or more than the height of surface of the insulator layer from the piezoelectric substrate (2) in at least a part of the first surface region, where λ is the wavelength of surface acoustic wave.

Inventors:

KIDO SHUNSUKE (JP)
NAKAO TAKESHI (JP)
NAKAI YASUHARU (JP)
NISHIYAMA KENJI (JP)
KADOTA MICHIO (JP)

Application Number:

PCT/JP2007/051995

Publication Date:

September 07, 2007

Filing Date:

February 06, 2007

Export Citation:

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Assignee:

MURATA MANUFACTURING CO (JP)
KIDO SHUNSUKE (JP)
NAKAO TAKESHI (JP)
NAKAI YASUHARU (JP)
NISHIYAMA KENJI (JP)
KADOTA MICHIO (JP)

International Classes:

H03H9/145; H01L41/22; H01L41/23; H01L41/253; H03H3/08; H03H9/25

Domestic Patent References:

WO2004095699A1

2004-11-04

Foreign References:

JPH11186866A	1999-07-09
JPS61117913A	1986-06-05
EP0744830A1	1996-11-27
EP1467484A2	2004-10-13

Other References: