Title:
ACTIVATOR, THIN FILM FORMING METHOD USING SAME, SEMICONDUCTOR SUBSTRATE MANUFACTURED THEREFROM, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/195653
Kind Code:
A1
Abstract:
The present invention relates to an activator, a thin film forming method using same, a semiconductor substrate manufactured therefrom, and a semiconductor device, wherein a predetermined structured compound is provided as an activator to effectively replace a ligand of an adsorption precursor, thereby improving the reaction rate and appropriately lowering the thin film growth rate, so that even when a thin film is formed on a substrate with a complicated structure, step coverage and thin film thickness uniformity can be greatly improved and impurities are reduced.
Inventors:
LEE SEUNG HYUN (KR)
JUNG JAE SUN (KR)
YEON CHANG BONG (KR)
KIM JONG MOON (KR)
JUNG JAE SUN (KR)
YEON CHANG BONG (KR)
KIM JONG MOON (KR)
Application Number:
PCT/KR2023/003576
Publication Date:
October 12, 2023
Filing Date:
March 17, 2023
Export Citation:
Assignee:
SOULBRAIN CO LTD (KR)
International Classes:
C23C16/455; C23C16/40; H01L21/02
Foreign References:
| KR20220009906A | 2022-01-25 | |||
| KR20220009909A | 2022-01-25 | |||
| KR20030059743A | 2003-07-10 | |||
| JP2000147792A | 2000-05-26 |
Other References:
TAN KOK CHEW; JUNG JAESUN; KIM SOJUNG; KIM JONGMOON; LEE SEOK JONG; PARK YOUNG-SOO: "Utilizing tertiary butyl iodide as an effective film quality enhancing agent for atomic layer deposition of HfO2 dielectric thin films", AIP ADVANCES, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 11, no. 7, 2 July 2021 (2021-07-02), 2 Huntington Quadrangle, Melville, NY 11747 , XP012257819, DOI: 10.1063/5.0055847
Attorney, Agent or Firm:
NEWKOREA PATENT & LAW FIRM (KR)
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