Title:
ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM IN WHICH SAME IS USED, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/056832
Kind Code:
A1
Abstract:
Provided is an active-light-sensitive or radiation-sensitive composition that contains (A) a compound having two or more of the structures represented by general formula (1), the compound not having an acid crosslinking group, and (B) a resin, said composition making it possible to form a pattern having exceptional sensitivity, resolution, roughness performance, and pattern cross-section shape, particularly when ultrafine patterns (e.g., having a line width of 50 nm or less) are formed. Also provided are a resist film in which the active-light-sensitive or radiation-sensitive composition is used, a pattern formation method, and a method for manufacturing an electronic device. In the formula, X represents an oxygen atom or a sulfur atom, and R represents a hydrogen atom or a monovalent organic group. ＊represents a bond.
Inventors:
SHIMOJU NAOYA (JP)
MOCHIZUKI HIDEHIRO (JP)
HIRANO SHUJI (JP)
MOCHIZUKI HIDEHIRO (JP)
HIRANO SHUJI (JP)
Application Number:
PCT/JP2016/075434
Publication Date:
April 06, 2017
Filing Date:
August 31, 2016
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/004; C07C233/62; C07C233/78; C07C237/42; C07C271/20; C07C271/22; C07C271/28; C07C275/26; C07C327/48; C07C333/04; C07C333/08; C07D233/56; C07D235/18; C07D295/088; C07D295/26; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
| WO2010001779A1 | 2010-01-07 |
Foreign References:
| JP2008241869A | 2008-10-09 | |||
| JP2014108985A | 2014-06-12 | |||
| JP2003248315A | 2003-09-05 | |||
| JP2015055723A | 2015-03-23 |
Attorney, Agent or Firm:
TAKAMATSU Takeshi et al. (JP)
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