Title:
ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/044270
Kind Code:
A1
Abstract:
Provided is an active-light-sensitive or radiation-sensitive resin composition with which it is possible to form a pattern in which ion leakage can be suppressed in an ion implantation step. Also provided are a resist film using the active-light-sensitive or radiation-sensitive resin composition, and a pattern formation method. Also provided is a method for manufacturing a solid-state imaging element using the pattern formation method. An active-light-sensitive or radiation-sensitive resin composition for forming a pattern used as a mask in an ion implantation step. The active-light-sensitive or radiation-sensitive resin composition includes a resin that includes a repeating unit having an acid-decomposable group, a photoacid generator, and an additive agent that has a melting point or glass transition temperature below 25°C and a molecular weight of 180 or more. The content of the additive agent is 1 mass% or more of the total solid content of the composition.
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Inventors:
HIGASHI KOHEI (JP)
TAKAKUWA HIDEKI (JP)
TAKAKUWA HIDEKI (JP)
Application Number:
PCT/JP2018/027574
Publication Date:
March 07, 2019
Filing Date:
July 23, 2018
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/039; G03F7/004; G03F7/20
Domestic Patent References:
| WO2017110352A1 | 2017-06-29 |
Foreign References:
| JP2015127797A | 2015-07-09 | |||
| JP2017143192A | 2017-08-17 | |||
| JP2015022074A | 2015-02-02 | |||
| JP2007206425A | 2007-08-16 | |||
| JP2014199273A | 2014-10-23 | |||
| JP2012019113A | 2012-01-26 | |||
| JP2015068850A | 2015-04-13 |
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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