Title:
ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/061851
Kind Code:
A1
Abstract:
A pixel region of an active matrix substrate 100 is provided with: a thin film transistor 101 having an oxide semiconductor layer 7; an inorganic insulating layer 11 and an organic insulating layer 12, which cover the thin film transistor; a common electrode 15; a dielectric layer 17 mainly containing silicon nitride; and a pixel electrode 19. The inorganic insulating layer has a laminated structure including a silicon oxide layer and a silicon nitride layer, a pixel electrode 10 is in contact with, in a pixel contact hole, a drain electrode 9, and the pixel contact hole comprises a first opening, a second opening, and a third opening, which are formed in the inorganic insulating layer 11, the organic insulating layer 12, and the dielectric layer 17, respectively. The side surface of the first opening and the side surface of the second opening are aligned with each other, and the side surface of the second opening includes: a first portion 121 inclined at a first angle θ1 with respect to the substrate; a second portion 122, which is positioned above the first portion, and which is inclined at a second angle θ2 that is larger than the first angle; and a boundary 120, which is positioned between the first portion and the second portion, and the inclination angle of which discontinuously changes with respect to the substrate.
Inventors:
KITAGAWA HIDEKI
DAITOH TOHRU
IMAI HAJIME
KIKUCHI TETSUO
SUZUKI MASAHIKO
ITOH TOSHIKATSU
UEDA TERUYUKI
NISHIMIYA SETSUJI
HARA KENGO
DAITOH TOHRU
IMAI HAJIME
KIKUCHI TETSUO
SUZUKI MASAHIKO
ITOH TOSHIKATSU
UEDA TERUYUKI
NISHIMIYA SETSUJI
HARA KENGO
Application Number:
PCT/JP2017/033633
Publication Date:
April 05, 2018
Filing Date:
September 19, 2017
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/336; G02F1/1368; G09F9/30; H01L21/28; H01L21/768; H01L23/522; H01L27/32; H01L29/786; H01L51/50; H05B33/02; H05B33/06
Domestic Patent References:
| WO2011142064A1 | 2011-11-17 | |||
| WO2015019857A1 | 2015-02-12 |
Foreign References:
| US20150243684A1 | 2015-08-27 | |||
| JP2003215615A | 2003-07-30 | |||
| JP2012248829A | 2012-12-13 | |||
| JP2015114374A | 2015-06-22 |
Attorney, Agent or Firm:
OKUDA Seiji (JP)
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