Title:
ACTIVE MATRIX SUBSTRATE AND METHOD OF MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/221294
Kind Code:
A1
Abstract:
An active matrix substrate according to an embodiment of the present invention is provided with: a substrate; a plurality of first TFTs supported by the substrate and provided in a non-display region; and a peripheral circuit including the plurality of first TFTs. Each of the first TFTs includes: a first gate electrode provided on the substrate; a first gate insulating layer covering the first gate electrode; a first oxide semiconductor layer facing the first gate electrode with the first gate insulating layer therebetween; and a first source electrode and a first drain electrode which are respectively connected to a source contact region and a drain contact region of the first oxide semiconductor layer. Each of the first TFTs has a bottom contact structure. The thickness of a first region of the first gate insulating layer is smaller than the thickness of a second region of the first gate insulating layer, wherein said first region overlaps a channel region, and said second region overlaps the source contact region and the drain contact region.
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Inventors:
MATSUKIZONO HIROSHI
Application Number:
PCT/JP2018/019489
Publication Date:
December 06, 2018
Filing Date:
May 21, 2018
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/8234; H01L21/336; H01L27/088; H01L29/786
Foreign References:
| JP2010232652A | 2010-10-14 | |||
| JP2016157955A | 2016-09-01 | |||
| JP2010093238A | 2010-04-22 | |||
| JP2014205902A | 2014-10-30 | |||
| JP2013254951A | 2013-12-19 | |||
| JP2010263195A | 2010-11-18 |
Attorney, Agent or Firm:
OKUDA Seiji (JP)
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