Title:
ACTIVE MATRIX SUBSTRATE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2016/021320
Kind Code:
A1
Abstract:
This active matrix substrate for liquid crystal panels of FFS mode is provided with a data line (24) that comprises an amorphous Si film (122), an n+ amorphous Si film (123), a main conductor part (133) and an IZO film (141). The n+ amorphous Si film (123) is formed larger than the main conductor part (133) and the IZO film (141) by etching the main conductor part (133) and the IZO film (141) in portions close to the periphery of a cover region of a photoresist (142). The amorphous Si film (122) is formed larger than the n+ amorphous Si film (123) by making a photomask pattern for a source layer larger than a photomask pattern for a pixel electrode layer. The main conductor part (133) is formed of a molybdenum-based material, and a two-layer protective insulation film, wherein a compressive stress is generated in one layer and a tensile stress is generated in the other layer, is formed on top of the data line (24). Consequently, an active matrix substrate having a common electrode is provided with high yield.
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Inventors:
KIMOTO HIDENOBU
TARUI TETSUYA
SEGUCHI YOSHIHIRO
SUGIMOTO TAKEHISA
TARUI TETSUYA
SEGUCHI YOSHIHIRO
SUGIMOTO TAKEHISA
Application Number:
PCT/JP2015/068178
Publication Date:
February 11, 2016
Filing Date:
June 24, 2015
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
G02F1/1368; G09F9/30; H01L21/28; H01L29/786
Foreign References:
| JP2013101232A | 2013-05-23 | |||
| JP2013097349A | 2013-05-20 | |||
| JP2012169610A | 2012-09-06 | |||
| JPS6194346A | 1986-05-13 | |||
| JPH0843853A | 1996-02-16 | |||
| JP2003297850A | 2003-10-17 |
Attorney, Agent or Firm:
SHIMADA, AKIHIRO (JP)
Akihiro Shimada (JP)
Akihiro Shimada (JP)
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