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Title:
ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/167737
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing an active-ray-sensitive or radiation-sensitive resin composition that can form a pattern with outstanding pattern line width roughness (LWR). The invention addresses another problem of providing a resist film, a pattern formation method, and a method for manufacturing an electronic device that use the active-ray-sensitive or radiation-sensitive resin composition. This active-ray-sensitive or radiation-sensitive resin composition includes a resin that includes repeating units derived from a monomer with a salt structure and repeating units with a group the polarity of which increases due to degradation through the action of an acid. The salt structure comprises an anionic structure site and a cationic structure site that is sensitive to and degradable by active rays or sensitive to and degradable by radiation. The pKa of a monomer formed by replacing the cationic structure site in the salt structure with a hydrogen atom is at least −0.80.

Inventors:
ASAKAWA DAISUKE (JP)
OKA HIRONORI (JP)
SAKITA KYOHEI (JP)
SHIRAKAWA MICHIHIRO (JP)
GOTO AKIYOSHI (JP)
Application Number:
PCT/JP2019/006235
Publication Date:
September 06, 2019
Filing Date:
February 20, 2019
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/038; C08F220/38; G03F7/004; G03F7/039; G03F7/20
Domestic Patent References:
WO2010119910A12010-10-21
WO2006121096A12006-11-16
Foreign References:
JP2018025778A2018-02-15
JP2017031378A2017-02-09
JP2013040296A2013-02-28
JP2011037834A2011-02-24
JP2011164436A2011-08-25
JP2012246426A2012-12-13
JP2019015802A2019-01-31
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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