Title:
ADAPTIVE THERMAL OVERSHOOT AND CURRENT LIMITING PROTECTION FOR MOSFETS
Document Type and Number:
WIPO Patent Application WO/2019/169611
Kind Code:
A1
Abstract:
An apparatus, an integrated circuit and a method for protecting a MOSFET are disclosed. The apparatus (400) includes: a first metal oxide semiconductor field effect transistor (MOSFET) (409) coupled between a first input terminal (402) for receiving a supply voltage and an output terminal (404) for coupling to a load, and having a first gate terminal; an enable terminal (406) coupled to the first gate terminal for receiving an enable signal; a first current mirror (412) coupled between the first input terminal and a first terminal of a first series resistor (432) and having an input coupled to the first gate terminal; and a second MOSFET (434) coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal. The apparatus, the integrated circuit and the method can realize the thermal and current limit protection of the MOSFET.
Inventors:
XU WEI (CN)
XU JINGWEI (US)
WANG YANG (CN)
MA QINGJIE (CN)
XU JINGWEI (US)
WANG YANG (CN)
MA QINGJIE (CN)
Application Number:
PCT/CN2018/078444
Publication Date:
September 12, 2019
Filing Date:
March 08, 2018
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC (US)
TEXAS INSTRUMENTS JAPAN LTD (JP)
TEXAS INSTRUMENTS JAPAN LTD (JP)
International Classes:
H02H3/08; H02H9/02
Foreign References:
US20180048140A1 | 2018-02-15 | |||
US8154346B2 | 2012-04-10 | |||
US20030169025A1 | 2003-09-11 | |||
JP2002111480A | 2002-04-12 | |||
EP0927920A1 | 1999-07-07 |
Attorney, Agent or Firm:
LEE AND LI - LEAVEN IPR AGENCY LTD. (CN)
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