Title:
ADHESIVE TAPE FOR SEMICONDUCTOR WAFER SURFACE PROTECTION, AND SEMICONDUCTOR WAFER PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/181240
Kind Code:
A1
Abstract:
This adhesive tape for semiconductor wafer surface protection is used heat bonded, under conditions of 40°C to 90°C, onto the surface of the semiconductor wafer having a depression-to-protrusion height difference of greater than or equal to 20 μm; this adhesive tape for semiconductor wafer surface protection comprises a substrate film, and adhesive layer, and an intermediate resin layer between the substrate film and the adhesive layer, the thickness of the intermediate resin layer is greater than or equal to the aforementioned depression-to-protrusion height difference, the melting point or Vicat softening point of the resin constituting the intermediate resin layer is 40°C-90°C, and the melt mass-flow rate of the resin constituting the intermediate resin layer is 10 to 100 g/min. This semiconductor wafer processing method utilizes the adhesive tape for semiconductor wafer surface protection.
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Inventors:
GOTO YUSUKE (JP)
Application Number:
PCT/JP2018/012284
Publication Date:
October 04, 2018
Filing Date:
March 27, 2018
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD (JP)
International Classes:
H01L21/304; C09J7/20; C09J7/30; C09J7/38; C09J201/00; H01L21/301; H01L21/683
Domestic Patent References:
| WO2016143711A1 | 2016-09-15 | |||
| WO2013122060A1 | 2013-08-22 |
Foreign References:
| JP2008060151A | 2008-03-13 | |||
| JP2010258426A | 2010-11-11 | |||
| JP2014015521A | 2014-01-30 | |||
| JP2015004003A | 2015-01-08 | |||
| JP2013087131A | 2013-05-13 | |||
| JP2005048039A | 2005-02-24 |
Attorney, Agent or Firm:
IIDA & PARTNERS et al. (JP)
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