ADVANCED PURIFICATION CELL FOR ALUMINUM SCRAP RECYCLING

CROSS REFERENCE TO RELATED APPLICATION

[001] This application claims priority to U.S. provisional patent application Ser. No. 63/276,892, entitled Methods and Systems of TiEti Products with Infiltrated Solid Aluminum, and filed November 8, 2021; this application claims priority to U.S. provisional patent application Ser. No. 63/311,366, entitled Advanced Purification Cell for Aluminum Scrap Recycling, and filed February 17, 2022; each of which is hereby incorporated by reference in its entirety.

BACKGROUND

[002] Aluminum has been traditionally made from alumina (AI2O3) that has been originated from bauxite ore. The conversion of alumina (AI2O3) to aluminum has been typically carried out via a smelting method that entails dissolving the alumina (AI2O3) in cryolite, a molten solvent, and then passing an electric current through the mixture, causing carbon from a carbon anode to attach to the oxygen component in the dissolved alumina (AI2O3), yielding aluminum and carbon dioxide as a by-product. Various efforts have been made to purify aluminum including the “Hoopes process” (see U.S. Patent No. 1,534,315) as well as those methods described in commonly owned international patent application WO2016/130823.

SUMMARY OF THE DISCLOSURE

[003] Broadly, the present disclosure relates to methods and systems for purifying aluminum in an aluminum purification cell. In some embodiments, the aluminum purification cell includes at least one electrode with a directing feature. Various directing features have been described in commonly owned U.S. Provisional Patent Application No. US 63/276,892, entitled Methods and Systems of TiB2 Products with Infiltrated Solid Aluminum, and filed on November 8, 2021, which is hereby incorporated by reference in its entirety.

[004] In some aspects, the techniques described herein relate to an aluminum purification cell, including: anon-carbonaceous substrate, wherein the non-carbonaceous substrate includes a directing feature, wherein the directing feature is configured to direct a wettable material in a predetermined direction.

[005] In some aspects, the techniques described herein relate to a cell, wherein the cell includes: a cell chamber; at least one anode within the cell chamber; and at least one cathode within the cell chamber, wherein the at least one cathode is at least partially above a top portion of the at least one anode.

[006] In some aspects, the techniques described herein relate to a cell, wherein at least a portion of the wettable material is located in and/or on the directing feature.

[007] In some aspects, the techniques described herein relate to a cell, wherein the wettable material is molten metal.

[008] In some aspects, the techniques described herein relate to a cell, wherein the wettable material includes metal.

[009] In some aspects, the techniques described herein relate to a cell, wherein the metal includes at least aluminum and magnesium.

[0010] In some aspects, the techniques described herein relate to a cell, wherein the metal includes aluminum.

[0011] In some aspects, the techniques described herein relate to a cell, wherein the metal includes at least 50 weight percent aluminum, or at least 55 weight percent aluminum, or at least 60 weight percent aluminum, or at least 65 weight percent aluminum, or at least 70 weight percent aluminum, or at least 75 weight percent aluminum, or at least 80 weight percent aluminum, or at least 85 weight percent aluminum, or at least 90 weight percent aluminum, or at least 95 weight percent aluminum.

[0012] In some aspects, the techniques described herein relate to a cell, wherein the metal is selected from the group consisting of an aluminum alloy, metallic aluminum, and combinations thereof.

[0013] In some aspects, the techniques described herein relate to a cell, wherein a surface of the non-carbonaceous substrate is at least partially covered in solid aluminum metal.

[0014] In some aspects, the techniques described herein relate to a cell, wherein the directing feature is selected from the group consisting of slots, grooves, pores, and combinations thereof.

[0015] In some aspects, the techniques described herein relate to a cell, wherein the non- carbonaceous substrate includes a cermet or a ceramic.

[0016] In some aspects, the techniques described herein relate to a cell, wherein the non- carbonaceous substrate includes TiEh.

[0017] In some aspects, the techniques described herein relate to a cell, wherein the non- carbonaceous substrate consists essentially of TiEh. [0018] In some aspects, the techniques described herein relate to a cell, wherein the predetermined direction is vertical and/or horizontal.

[0019] In some aspects, the techniques described herein relate to a cell, wherein the predetermined direction is an upwardly direction towards an electrolyte of the aluminum purification cell.

[0020] In some aspects, the techniques described herein relate to a cell, wherein the non- carbonaceous substrate is not an electrode.

[0021] In some aspects, the techniques described herein relate to a cell, wherein the non- carbonaceous substrate is an electrode.

[0022] In some aspects, the techniques described herein relate to a cell, wherein the non- carbonaceous substrate is an anode or a cathode.

[0023] In some aspects, the techniques described herein relate to a cell, wherein the non- carbonaceous substrate is a first substrate, and wherein the cell includes a second substrate.

[0024] In some aspects, the techniques described herein relate to a cell, wherein the second substrate is a carbonaceous substrate.

[0025] In some aspects, the techniques described herein relate to a cell, wherein the second substrate is a non-carbonaceous substrate

[0026] In some aspects, the techniques described herein relate to a cell, wherein the second substrate includes a cermet or a ceramic.

[0027] In some aspects, the techniques described herein relate to a cell, wherein the second substrate includes TiEh.

[0028] In some aspects, the techniques described herein relate to a cell, wherein the second substrate consists essentially of TiEh.

[0029] In some aspects, the techniques described herein relate to a cell, wherein the second substrate includes a directing feature.

[0030] In some aspects, the techniques described herein relate to a cell, wherein the second substrate is absent a directing feature.

[0031] In some aspects, the techniques described herein relate to a cell, wherein the second substrate is an anode.

[0032] In some aspects, the techniques described herein relate to a cell, wherein the second substrate is a cathode. [0033] In some aspects, the techniques described herein relate to an aluminum purification cell, including: (a) a non-carbonaceous substrate including at least one directing feature; and (b) solid aluminum metal at least partially covering surfaces of the non-carbonaceous substrate. [0034] In some aspects, the techniques described herein relate to a cell, wherein the cell includes: a cell chamber; at least one anode within the cell chamber; and at least one cathode within the cell chamber, wherein the at least one cathode is at least partially above a top portion of the at least one anode.

[0035] In some aspects, the techniques described herein relate to a cell, wherein at least a portion of the solid aluminum metal is located in and/or on the directing feature.

[0036] In some aspects, the techniques described herein relate to a cell, wherein the solid aluminum metal is at least partially contained within the at least one directing feature.

[0037] In some aspects, the techniques described herein relate to a cell, wherein the non- carbonaceous substrate includes a surface area, wherein a first portion of the surface area includes the at least one directing feature, and wherein a second portion of the surface area is absent of any directing feature.

[0038] In some aspects, the techniques described herein relate to a cell, wherein the first portion of the surface area is at least partially covered by the solid aluminum metal.

[0039] In some aspects, the techniques described herein relate to a cell, wherein the first portion of the surface area is at least 1% covered by the solid aluminum metal.

[0040] In some aspects, the techniques described herein relate to a cell, wherein the second portion of the surface area is at least partially covered by the solid aluminum metal.

[0041] In some aspects, the techniques described herein relate to a cell, wherein the second portion of the surface area is at least 1% covered by the solid aluminum metal.

[0042] In some aspects, the techniques described herein relate to a method of using any cell, wherein a surface of the non-carbonaceous substrate is at least partially covered in solid aluminum metal, wherein the method includes: heating the non-carbonaceous substrate above a melting point temperature of the solid aluminum metal.

[0043] In some aspects, the techniques described herein relate to a method of using any cell, including: restricting or preventing attack of the non-carbonaceous substrate via an electrolyte of the aluminum purification cell. [0044] In some aspects, the techniques described herein relate to a method, wherein the restricting or preventing includes at least partially covering the non-carbonaceous substrate by the wettable material.

[0045] In some aspects, the techniques described herein relate to a method, wherein the restricting or preventing includes covering at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, at least 90%, at least 95%, or at least 99% of the surface area of the non-carbonaceous substrate with the wettable material.

[0046] In some aspects, the techniques described herein relate to a method, wherein the wettable material restricts or prevents contacting of outer surfaces of the substrate by the electrolyte.

[0047] In some aspects, the techniques described herein relate to a method using any cell, including: restricting or preventing attack of the non-carbonaceous substrate when a temperature of the non-carbonaceous substrate is less than a melting point temperature of the solid aluminum metal.

[0048] In some aspects, the techniques described herein relate to a method, wherein the restricting or preventing includes at least partially covering the non-carbonaceous substrate by the solid aluminum.

[0049] In some aspects, the techniques described herein relate to a method, wherein the restricting or preventing includes covering at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, at least 90%, at least 95%, or at least 99% of the surface area of the non-carbonaceous substrate by the solid aluminum.

[0050] In some aspects, the techniques described herein relate to a method, wherein the solid aluminum restricts or prevents contacting of outer surfaces of the substrate by an electrolyte.

[0051] In some aspects, the techniques described herein relate to a method including: (a) feeding an aluminum feedstock into the aluminum purification cell, wherein the aluminum feedstock includes aluminum metal, wherein the aluminum purification cell includes a molten metal pad and an electrolyte, wherein the molten metal pad includes a density greater than that of the electrolyte; (b) passing electrical current through at least one anode through the electrolyte and into at least one cathode, (i) wherein the at least one anode and the at least one cathode are partially disposed in the electrolyte, (ii) wherein the at least one anode is partially disposed in the molten metal pad, (iii) wherein the at least one anode and/or the at least one cathode is a non-carbonaceous substrate including a directing feature, and (iv) wherein the directing feature is configured to direct wettable material in a predetermined direction; (c) directing the aluminum metal of the molten metal pad towards the electrolyte via the directing feature; (d) producing at least some aluminum ions in the electrolyte; and (e) producing a purified aluminum product.

[0052] In some aspects, the techniques described herein relate to a cell, wherein the directing feature is in or on the substrate (e.g., the non-carbonaceous substrate).

[0053] While the present disclosure is generally directed to purifying aluminum, the apparatus, system, and methods described herein are applicable to purifying other metals (e.g., magnesium).

[0054] In some embodiments, the directing feature includes at least one slot that is open or closed, wherein the at least one slot extends through a thickness of the TiEh substrate. In some embodiments, dimensions of the at least one slot are predetermined. In some embodiments, the TiB2 substrate includes a first prong and a second prong, and wherein the directing feature includes a slot defined between an inner surface of the first prong and an inner surface of the second prong. In some embodiments, the slot extends an entire length (1) of the first prong and an entire length (1) of the second prong. In some embodiments, the entire length (1) of the first prong and the entire length (1) of the second prong range from about 0.01 meters to about 1 meter. In some embodiments, a thickness (t) of the first prong and a thickness (t) of the second prong range from about 1 mm to about 20 mm. In some embodiments, the slot extends a distance (d) between the inner surface of the first prong and the inner surface of the second prong. In some embodiments, the distance (d) ranges from about 20 pm to about 20 mm. In some embodiments, a width (w) of the first prong and a width (w) of the second prong range from about 1 mm to about 20 mm.

[0055] As noted above, in some embodiments, the slot is fully closed. In some embodiments, when a slot is fully closed, the directing feature becomes a fully enclosed channel. In some embodiments, the at least one slot is partially closed, i.e., a partially closed slot. In some embodiments, a partially closed slot comprises a closed lateral width opening. When the at least one slot is partially closed, the lateral width opening of the at least one slot can be fully closed and extend continuously for a portion of a length of the slot. When the at least one slot is partially closed, the lateral width opening of the at least one slot can be partially closed for a whole length of the slot. When the at least one slot is partially closed, an amount of closure of the lateral width opening of the at least one slot can vary along the length of the slot. [0056] As noted above, the substrate may include at least one channel. The channel can be any length, width, size, or shape. In some embodiments, the channel extends substantially parallel to a longitudinal axis of the substrate. In some embodiments, the channel extends at an angle to a longitudinal axis of the substrate. In some embodiments, more than one channel can converge to a single channel. In some embodiments, a single channel can split into more than one channel. A cross-section of the channel can be any shape or size. In some embodiments, the cross-section is substantially constant across a length of the channel. In some embodiments, the cross-section is variable across a length of the channel. In some embodiments, the crosssection can increase and/or decrease along a length of the channel.

[0057] Although the present disclosure generally refers to TiEh substrates, other ceramic and/or cermet substrates having directing features may be used. Any ceramic and/or cermet substrate having a directing feature can be used with any wettable metal. In some embodiments, any wettable metal can be any suitable metal for transfer via the ceramic and/or cermet substrates. In some embodiments, the suitable metal may be aluminum, such as aluminum alloy, metallic aluminum, and combinations thereof. In some embodiments, the suitable metal may be copper, such as a copper alloy, metallic copper, and combinations thereof. In some embodiments, the wettable material consists essentially of aluminum, magnesium, copper, and combinations thereof. In some embodiments, the wettable material is predominantly aluminum. In one aspect, the present disclosure relates to a product with a ceramic substrate or a cermet substrate having a directing feature, wherein the directing feature is configured to direct ceramic wettable material or cermet wettable material in a predetermined direction. In some embodiments, the substrate is a ceramic substrate. In some embodiments, the ceramic substrate is one of a TiEh substrate, a ZrEh substrate, or a HfEh substrate. In some embodiments, the ceramic wettable material is aluminum, such as aluminum alloy, metallic aluminum, and combinations thereof.

[0058] While the above disclosures have been made relative to TiEh and aluminum, the apparatus, systems, and methods described herein are applicable to other ceramic and/or cermet materials other than TiEh. For instance, the disclosures herein may be equally applicable to other metal borides (e.g., metal diborides) having metal wetting capabilities, such as ZrEh and HfEh, just to name two, both of which are aluminum wettable materials.

[0059] In some embodiments, the substrate can be a carbon-based (carbonaceous) material. In some embodiments, the carbon-based material can be an inorganic, carbon-based material. Suitable carbon-based materials may include, for instance, amorphous and crystalline forms of carbon. In some embodiments, a carbon-based material comprises graphite. In some embodiments, the substate comprises a pre-baked carbon electrode material. Carbon-based substrates may include a plated material to facilitate wetting of the suitable metal, e.g., of the aluminum.

[0060] In some embodiments, the substrate can be a non-carbonaceous material. Non- carbonaceous materials are any materials that are not carbon-based. Non-carbonaceous materials include, for instance, ceramic materials and cermet materials. In some embodiments, the substrate can be ceramic or cermet.

[0061] Ceramic materials include inorganic, non-metallic materials. Inorganic, non- metallic materials can include boride, oxide, nitride, or carbide materials. In some embodiments, ceramic materials include titanium. In some embodiments, ceramic materials include metal borides (e.g., metal diborides). In some embodiments, metal diboride materials include TiEh, ZrEh, HfEh, or SrEh.

[0062] Cermet materials are a material of ceramic and metal materials. Cermet materials can include a ceramic matrix bonded by a metallic binder. In some embodiments, the cermet material includes copper (Cu), nickel (Ni), chromium (Cr), tungsten (W), molybdenum (Mo), iron (Fe), cobalt (Co), or an alloy or combinations thereof. In some embodiments, cermet materials include nickel-titanium carbide or nickel-titanium diboride.

[0063] In some embodiments, the substrate comprises, consists essentially of, or consists of the stated material. In one embodiment, the substrate consists essentially of or consists of a ceramic. In one embodiment, the substrate consists essentially of or consists of a cermet. In one embodiment, the substrate consists essentially of or consists of a carbon-based material.

[0064] In some embodiments, the substrate is a plated material that facilitates wetting. In some embodiments, the plated material is a ceramic and/or a cermet such as any of the ceramic or cermet materials described herein. In some embodiments, the substrate is carbon-based material plated with a ceramic, e.g., TiEh.

BRIEF DESCRIPTION OF THE DRAWINGS

[0065] FIG. 1A illustrates one embodiment of a method for directing a TiEh wettable material in a predetermined direction using a directing feature.

[0066] FIG. IB illustrates another embodiment of a method for directing a Ti Eh wettable material in a predetermined direction using a directing feature.

[0067] FIG. 2A is a perspective view of an embodiment of a product with a TiEh substrate having a plurality of slots as directing features. [0068] FIG. 2B is a first side view of the embodiment shown in FIG. 2A.

[0069] FIG. 2C is an enlarged partial top section view of the embodiment shown in FIG.

2A indicated by the circle of dashed lines in FIG. 2A.

[0070] FIG. 3A is a front view of an embodiment of a product with a TiEh substrate having a slot as a directing feature.

[0071] FIG. 3B is a section view of a cross-section taken along the dashed line 3B shown in FIG. 3A.

[0072] FIG. 3C is a first side view of the embodiment shown in FIG. 3A.

[0073] FIG. 4A is a front view of an embodiment of a product with a TiEh substrate having a plurality of grooves as directing features.

[0074] FIG. 4B is a first side view of the embodiment shown in FIG. 4A.

[0075] FIG. 4C is an enlarged partial section view of the embodiment shown in FIG. 4A indicated by the circle of dashed lines in FIG. 4A.

[0076] FIG. 4D is an alternative configuration of the plurality of grooves of the embodiment shown in FIG. 4C.

[0077] FIG. 5A is a side view of another embodiment of a product with a TiEh substrate having a plurality of pores as directing features.

[0078] FIG. 5B is a close-up view of a portion of the embodiment shown in FIG. 5A indicated by dashed lines in FIG. 5A.

[0079] FIG. 6A is a perspective view of an embodiment of a product with a TiEh substrate having a plurality of slots as directing features and a solid aluminum metal covering the TiEh substrate.

[0080] FIG. 6B is a first side view of a cross-section taken along the arrows 6B shown in FIG. 6A.

[0081] FIG. 6C is an enlarged partial section view of the embodiment shown in FIG. 6A indicated by the circle of dashed lines in FIG. 6A.

[0082] FIG. 6D is a cross-sectional side view of an embodiment of a product with a TiB2 substrate having a plurality of slots as directing features and a solid aluminum metal covering an upper portion of the TiB2 substrate.

[0083] FIG. 6E is a partial cross-section taken along the dashed line 6E as shown in FIG. 6D where only one of the slots of the plurality of slots is shown. The cross-section is along the upper portion of the TiB2 substrate where there is solid aluminum metal. [0084] FIG. 6F is a partial cross-section taken along the dashed line 6F as shown in FIG. 6D where only one of the slots of the plurality of slots is shown. The cross-section is along the lower portion of the TiEh substrate where there is no solid aluminum metal.

[0085] FIG. 6G is a cross-sectional side view of an embodiment of a TiEh substrate having a plurality of slots as directing features and a solid aluminum metal covering half of the TiEh substrate, the front portion.

[0086] FIG. 6H is a partial cross-section taken along the dashed line 6H as shown in FIG. 6G where only one of the slots of the plurality of slots is shown.

[0087] FIG. 61 is a side view of an embodiment of a TiEh substrate having a plurality of slots as directing features and a solid aluminum metal in the plurality of slots.

[0088] FIG. 6J is a partial cross-section taken along the dashed line 6J as shown in FIG. 61 where only one of the slots of the plurality of slots is shown.

[0089] FIG. 6K is a front view of an embodiment of a TiEh substrate having a plurality of slots as directing features and a solid aluminum metal covering some or none of the slots.

[0090] FIG. 6L is a first side view of the embodiment shown in FIG. 6K.

[0091] FIG. 6M is a front view of an embodiment of a TiEh substrate with a surface area having a first portion of the surface area with a plurality of slots as directing features and a second portion of the surface area being absent of any directing feature.

[0092] FIG. 6N is a first side view of the embodiment shown in FIG. 6M with the second portion of the surface area being absent of any directing feature.

[0093] FIG. 7A is a front view of an embodiment of a product with a Ti Eb substrate having a slot as a directing feature and a solid aluminum metal covering the TiEh substrate.

[0094] FIG. 7B is a cross-section taken along the dashed line 7B shown in FIG. 7A.

[0095] FIG. 7C is a first side view of a cross-section taken along the line 7C shown in FIG.

7 A.

[0096] FIG. 7D is a front view of an embodiment of a product of a TiEh substrate having a slot as a directing feature and a solid aluminum metal covering a portion of the slot.

[0097] FIG. 7E is a cross-section taken along the dashed line 7E shown in FIG. 7D.

[0098] FIG. 7F is a first side view of the embodiment shown in FIG. 7F.

[0099] FIG. 8A is a front view of an embodiment of a product with a Ti Eh substrate having a plurality of grooves as directing features and a solid aluminum metal covering the TiEh substrate. [00100] FIG. 8B is a first side view a cross-section taken along line 8B shown in of FIG.

8A.

[00101] FIG. 8C is an enlarged partial section view of the embodiment shown in FIG. 8A indicated by the circle of dashed lines in FIG. 8A.

[00102] FIG. 8D is a rear view of an embodiment of a product of a TiEh substrate having a plurality of grooves as directing features and a solid aluminum metal covering the front half of the TiB2 substrate.

[00103] FIG. 8E is a first side view of a cross-section taken along line 8B shown in FIG. 8D.

[00104] FIG. 8F is an enlarged partial section view of the embodiment shown in FIG. 8D indicated by the circle of dashed lines in FIG. 8F.

[00105] FIG. 9 is a close-up view of a portion of an embodiment with pores and solid aluminum metal, in accordance with some embodiments.

[00106] FIG. 10 is a frontal view of a TiB2 foam sintered end product that was used in labscale testing.

[00107] FIG. 11 is a frontal view of four TiB2 foam samples that were used in lab-scale testing, the samples having porosities of about 10, 20, 30, and 45 pores per inch (“PPI”).

[00108] FIG. 12 is a schematic cut-away side view of three crucibles that were used in labscale testing, each including four TiB2 foam samples submerged (partially or completely) in molten aluminum for 48 hours.

[00109] FIG. 13A is a frontal view of a TiB2 foam sample from a crucible that was used in lab-scale testing after it was fully submerged for about 48 hours in molten aluminum.

[00110] FIG. 13B is a frontal view of a TiB2 foam sample from a crucible that was used in lab-scale testing after it was partially submerged for about 48 hours in molten aluminum.

[00111] FIG. 14 illustrates one embodiment of a method for purifying aluminum metal, such as aluminum scrap, in an aluminum purification cell.

[00112] FIG. 15A is a schematic cut-away side view of an embodiment of an aluminum purification cell for purifying aluminum, in accordance with some embodiments.

[00113] FIG. 15B is a close-up view of a representative pair of electrodes shown in FIG.

15 A. DETAILED DESCRIPTION

[00114] This document includes several sections. Section i describes the aluminum purification cells. Section ii describes substrates having directing features. Section iii describes the start-up of the aluminum purification cell. Section iv describes the use of the substrates having directing features of Section ii in the aluminum purification cells of Section i. Definitions are also included below.

[00115] The present disclosure will be further explained with reference to the attached drawings, wherein like structures are referred to by like numerals throughout the several views. The figures constitute a part of this specification and include illustrative embodiments of the present disclosure and illustrate various objects and features thereof. Further, the figures are not necessarily to scale, some features may be exaggerated to show details of particular components. In addition, any measurements, specifications and the like shown in the figures are intended to be illustrative, and not restrictive. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a representative basis for teaching one skilled in the art to variously employ the present disclosure.

[00116] Among those benefits and improvements that have been disclosed, other objects and advantages of the present disclosure will become apparent from the following description taken in conjunction with the accompanying figures. Detailed embodiments of the present disclosure are disclosed herein; however, it is to be understood that the disclosed embodiments are merely illustrative of the present disclosure that may be embodied in various forms. In addition, each of the examples given in connection with the various embodiments of the invention which are intended to be illustrative, and not restrictive.

[00117] Throughout the specification and claims, the following terms take the meanings explicitly associated herein, unless the context clearly dictates otherwise. The phrases “in one embodiment” and “in some embodiments” as used herein do not necessarily refer to the same embodiment(s), though it may. Furthermore, the phrases “in another embodiment” and “in some other embodiments” as used herein do not necessarily refer to a different embodiment, although it may. Thus, as described below, various embodiments of the invention may be readily combined, without departing from the scope or spirit of the invention.

[00118] In addition, as used herein, the term “or” is an inclusive “or” operator, and is equivalent to the term “and/or,” unless the context clearly dictates otherwise. The term “based on” is not exclusive and allows for being based on additional factors not described, unless the context clearly dictates otherwise. In addition, throughout the specification, the meaning of “a,” “an,” and “the” include plural references. The meaning of “in” includes “in” and “on.

[00119] As used herein, “aluminum feedstock” means material having at least 50 wt. % aluminum.

[00120] As used herein, “purified aluminum” means material having at least 99.5 wt. % aluminum.

[00121] As used herein, “purified molten aluminum” means molten material having at least 99.5 wt. % aluminum.

[00122] As used herein, “raffinate” means aluminum containing a very high impurity content.

[00123] As used herein, “molten metal pad” means a reservoir of molten material located below an electrolyte, wherein the molten material comprises aluminum.

[00124] As used herein, “sludge” means waste material precipitated during aluminum purification. In some embodiments, sludge comprises solid material.

[00125] As used herein, “aluminum-wettable” means having a contact angle with molten aluminum of not greater than 90 degrees.

[00126] As used herein, “wettable material” means having a contact angle with a non- carbonaceous material of not greater than 90 degrees.

[00127] As used herein, “electrolyte” means a medium in which the flow of electrical current is carried out by the movement of ions/ionic species. In one embodiment, an electrolyte may comprise molten salt.

[00128] As used herein, “energy efficiency” means the amount of energy (in kilowatt hours) consumed by an aluminum purification cell per kilogram of purified aluminum produced by the aluminum purification cell. Thus, energy efficiency may be expressed in kilowatt hours/kilogram of aluminum produced (kWh/kg).

[00129] As used herein, “anode-cathode overlap” (ACO) means the vertical distance from the distal end of an anode (e.g., elongate vertical anode) to the distal end of a respective cathode (e.g., elongate vertical cathode).

[00130] As used herein, “anode-to-cathode distance” (ACD) means the horizontal distance separating an anode (e.g., elongate vertical anode) from a respective cathode (e.g., elongate vertical cathode). i. Aluminum purification cells having substrates using directing features

[00131] The present disclosure relates to aluminum purification cells having substrates that comprise one or more directing features. Such substrates are explained in detailed Section ii below and are further described in commonly owned U.S. Provisional Patent Application No. 63/276,892 which is incorporated by reference herein in its entirety. The aluminum purification cells disclosed herein may include any of the substrates described in Section ii and in any combination. In some embodiments, the substrate is not an electrode. In some embodiments, the substrate is an electrode. For instance, a first electrode may comprise a substrate with at least one groove while a second electrode may comprise a substrate with one slot or porosity. As another example, a first electrode may comprise a substrate with no directing feature and a second electrode with a groove. As another example, a first electrode may comprise a substrate with a groove or porosity and a second electrode may comprise a substrate with no directing feature. As another example, a first electrode may comprise a substrate with a porosity and a second electrode may comprise a substrate with a porosity. Any of the substrates can be used in any combination with any carbonaceous electrode or non-carbonaceous electrode.

[00132] FIG. 14 illustrates one embodiment of a method for purifying aluminum metal, such as aluminum scrap, in an aluminum purification cell. In some embodiments, the method for purifying aluminum in an aluminum purification cell includes using an at least one electrode, such as an anode or cathode. FIG. 14 displays some of the steps in a dashed box, which indicates that these steps are optional. In some embodiments, the method includes feeding aluminum feedstock to an aluminum purification cell (the feeding step 10100), directing aluminum metal towards an electrolyte (the directing step 10200), and producing purified aluminum product (the producing step 10300). In some embodiments, the method includes passing electrical current through an electrode (e.g., an anode and/or cathode) (the passing electrical current step 10420) and/or producing ions in the electrolyte (the producing ions step 10440).

[00133] FIG. 15A is a schematic cut-away side view of an embodiment of an aluminum purification cell 1000 for purifying aluminum in accordance with some embodiments. The aluminum purification cell 1000 is an exemplary embodiment of a purification cell for the apparatus, system, and methods described herein.

[00134] FIG. 15B is a close-up view of some of the electrodes, e.g., the anode 1090 and the cathode 1150 from FIG. 15 A.

[00135] The aluminum purification cell 1000 includes a cell chamber 1210 with a cell bottom 1060, refractory sidewalls 1030, and a refractory top cover 1040, at least one anode 1090 extending upward from the cell bottom 1060, a cathode connector 1140 located proximal the refractory top cover 1040, at least one cathode 1150 extending downward from the cathode connector 1140, an extraction port 1200 to recover purified aluminum 1120 from the cell chamber 1210, and a cell access channel 1160 with an access port 1170 to provide access for aluminum feedstock 1180 into the cell chamber 1210. The cell chamber 1210 is at least partially defined by refractory sidewalls 1030, refractory top cover 1040, and cell bottom 1060. A base 1010 is located proximal the cell bottom 1060. In some embodiments, the cell chamber 1210 includes the extraction port 1200 and the access port 1170 in the refractory sidewall 1030.

[00136] In some embodiments, the aluminum purification cell 1000 includes the cell access channel 1160 penetrating the cell chamber 1210 thereby providing access to the lower portion of the cell chamber 1210. The cell access channel 1160 can include the access port 1170. Aluminum feedstock 1180 may be added to the aluminum purification cell 1000 via the access port 1170.

[00137] In some embodiments, the aluminum purification cell 1000 includes the extraction port 1200 penetrating the refractory sidewalls 1030, thereby providing access to an upper portion of the cell chamber 1210. Purified aluminum 1120 may be extracted from the aluminum purification cell 1000 via the extraction port 1200.

[00138] In some embodiments, the aluminum purification cell 1000 includes an inert gas inlet 1220 formed in the refractory top cover 1040. The inert gas inlet 1220 is configured to provide an inert atmosphere to the cell chamber 1210. Examples of inert gases include helium, argon, and nitrogen.

[00139] The cell bottom 1060 includes an upper surface 1080 and a lower surface 1070. In some embodiments, the cell bottom 1060 is flat. In some embodiments, the cell bottom 1060 is downwardly sloped towards the access port 1170. In some embodiments, the slope of the cell bottom 1060 has an angle of less than 10 degrees. In some embodiments, the slope of the cell bottom 1060 has an angle of from 3 to 5 degrees.

[00140] The aluminum purification cell 1000 includes a cathode connector 1140 proximal a refractory top cover 1040. The cathode connector 1140 includes an upper connection rod 1130 configured to connect to an external power source. The cathode connector 1140 includes a lower surface 1142 and an upper surface 1144. Opposite the cathode connector 1140, the aluminum purification cell 1000 includes an anode connector 1050 in electrical communication with the cell bottom 1060. The anode connector 1050 is configured to connect to an external power source. [00141] The anode 1090 and the cathode 1150 are electrodes. In some embodiments, some of the electrodes are made from the same material and some are made from a different material than one another. In some embodiments, all the electrodes are made from a different material than one another. In some embodiments, all the electrodes are made from the same material. In some embodiments, some of the electrodes are made of carbonaceous material and some of the electrodes are made of a non-carbonaceous material.

[00142] The electrodes (i.e., the anode 1090 and the cathode 1150) can be configured from an aluminum-wettable material. In some embodiments, the electrodes include one or more of TiB2, ZrB2, HfB2, SrB2, carbonaceous material (e.g., graphite), tungsten (W), Molybdenum (Mo), steel, or combinations thereof. In some embodiments, the electrodes are made from a non-carbonaceous material. In some embodiments, the electrodes are made from a cermet or a ceramic. In some embodiments, the electrodes are ceramic. In some embodiments, the electrodes are made from titanium. In some embodiments, the electrodes include TiB2. In some embodiments, the electrodes consist essentially of TiB2. In some embodiments, the electrodes are made of multiple layers.

[00143] The anode 1090 is disposed on a cell bottom 1060 of the aluminum purification cell 1000. The anode 1090 includes a proximal end 1094 connected to an upper surface 1080 of the cell bottom 1060. The anode 1090 includes a distal end 1092 extending upward toward the refractory top cover 1040 of the aluminum purification cell 1000. The anode 1090 includes a middle portion therebetween the distal end 1092 and the proximal end 1094. In some embodiments, the anode 1090 is a vertical anode.

[00144] The cathode 1150 includes a proximal end 1154 connected to the cathode connector 1140 and a distal end 1152 extending downward toward the base 1010. The cathode 1150 includes a middle portion between the proximal end 1154 and the distal end 1152. In some embodiments, the cathode 1150 is a vertical cathode. The anode 1090 may be interleaved with the cathode 1150.

[00145] In some embodiments, the anode 1090 overlaps the cathode 1150 thereby defining an anode-cathode overlap (ACO) 1290. The distal end 1092 of the anode 1090 and a distal end 1152 of the cathode 1150 partially overlap in FIG. 15B. In some embodiments, the distal end 1152 of the cathode 1150 is proximal a middle portion of the anode 1090, and a distal end 1092 of the anode 1090 is proximal a middle portion of the cathode 1150. In some embodiments, the anode-cathode overlap (ACO) 1290 is 0 to 50 inches. In some embodiments, the anode-cathode overlap 1290 is 1 to 50 inches. In some embodiments, the anode-cathode overlap 1290 is 5 to 50 inches. In some embodiments, the anode-cathode overlap 1290 is 10 to 50 inches. In some embodiments, the anode-cathode overlap 1290 is 20 to 50 inches. In some embodiments, the anode-cathode overlap 1290 is 25 to 50 inches. In some embodiments, the anode-cathode overlap 1290 is at least some overlap up to 12 inches of overlap. In some embodiments, the anode-cathode overlap 1290 is at least 2 inches of overlap to 10 inches of overlap. In some embodiments, the anode-cathode overlap 1290 is at least 3 inches of overlap to 8 inches of overlap. In some embodiments, the anode-cathode overlap 1290 is at least 3 inches of overlap to 6 inches of overlap.

[00146] The lateral spacing distance between the anode 1090 and the cathode 1150 can be specified as anode-to-cathode distance (ACD) 1280. In some embodiments, the anode-to- cathode distance 1280 may be 1/8 inch to 3 inches. In some embodiments, the anode-to-cathode distance 1280 may be 1/8 inch to 2 inches. In some embodiments, the anode-to-cathode distance 1280 may be 1/8 inch to 1 inch. In some embodiments, the anode-to-cathode distance 1280 may be 1/8 inch to 1/4 inch. In some embodiments, the anode-to-cathode distance 1280 may be 1/4 inch to 1/2 inch. In some embodiments, the anode-to-cathode distance 1280 may be 1/8 inch to 3/4 inch. In some embodiments, the anode-to-cathode distance 1280 may be 1/8 inch to 1 inch. In some embodiments, the anode-to-cathode distance 1280 may be 1/8 inch to 1/2 inch.

[00147] In some embodiments, the aluminum purification cell 1000 includes an outer shell 1020. The outer shell 1020 may include steel or other suitable materials. In some embodiments, the outer shell 1020 may include a shell floor located beneath the base 1010 (the shell floor is not shown in the figures). In some embodiments, the outer shell 1020 may include shell sidewalls spaced apart from and surrounding the refractory sidewalls 1030.

[00148] In some embodiments, the aluminum purification cell 1000 includes a cell lining to provide thermal insulation to the cell chamber 1210. The cell lining may be located between the refractory sidewalls 1030 and the outer shell 1020 and between the base 1010 and the cell bottom 1060. In some embodiments, the cell lining may encapsulate substantially all of the cell chamber 1210 or only a portion of the cell chamber 1210. The cell lining may facilitate high electrical efficiency of the aluminum purification cell 1000.

[00149] In some embodiments, the cell chamber 1210 contains a molten metal pad 1100, the purified aluminum 1120, and the electrolyte 1110. The molten metal pad 1100 is in contact with the cell bottom 1060. The electrolyte 1110 separates the purified aluminum 1120 from the molten metal pad 1100. The anode 1090 extends upward from the cell bottom 1060, through the molten metal pad 1100 and terminates in the electrolyte 1110. The cathode 1150 extends downward from the cathode connector 1140 and terminates in the electrolyte 1110 such that the cathode 1150 overlaps the anode 1090 within the electrolyte 1110. Thus, the cathode 1150 is separated from the anode 1090 by electrolyte 1110.

[00150] In the illustrated embodiment, the purified aluminum 1120 has a density less than an electrolyte 1110 of the aluminum purification cell 1000. The electrolyte 1110 has a density less than the molten metal pad 1100 of the aluminum purification cell 1000. The electrolyte 1110 separates the top layer of purified aluminum 1120 from the molten metal pad 1100. In this regard, the composition of the electrolyte 1110 may be selected such that the electrolyte 1110 has a lower density than the molten metal pad 1100 and higher density than the purified aluminum 1120. In some embodiments, the electrolyte 1110 includes molten salt. In some embodiments, the electrolyte 1110 includes at least one of fluorides and/or chlorides. In some embodiments, the electrolyte 1110 contains at least one of fluorides and/or chlorides of Na, K, Al, Ba, Ca, Ce, La, Cs, Rb, or combinations thereof, among others.

[00151] In some embodiments, the molten metal pad 1100 includes at least 50 wt. % aluminum metal, or at least 55 wt. % aluminum metal, or at least 60 wt. % aluminum metal, or at least 65 wt. % aluminum metal, or at least 70 wt. % aluminum metal, or at least 75 wt. % aluminum metal, or at least 80 wt. % aluminum metal, or at least 85 wt. % aluminum metal, or at least 90 wt. % aluminum metal, or at least 95 wt. % aluminum metal.

[00152] In some embodiments, the molten metal pad 1100 includes at least one alloy including one or more of Al, Si, Cu, Fe, Sb, Gd, Cd, Sn, Pb and impurities. In some embodiments, the composition of the wettable material on the anode 1090 in the aluminum purification cell 1000 is the same as or substantially similar to the molten metal pad 1100 (see Section ii for discussion of the wettable material). In some embodiments, the composition of the wettable material is metal. In some embodiments, the metal includes aluminum or at least aluminum and magnesium. In some embodiments, the metal includes at least 50 weight percent aluminum, or at least 55 weight percent aluminum, or at least 60 weight percent aluminum, or at least 65 weight percent aluminum, or at least 70 weight percent aluminum, or at least 75 weight percent aluminum, or at least 80 weight percent aluminum, or at least 85 weight percent aluminum, or at least 90 weight percent aluminum, or at least 95 weight percent aluminum. In some embodiments, the metal is selected from the group consisting of an aluminum alloy, metallic aluminum, and combinations thereof. [00153] The aluminum purification cell 1000 includes the molten metal pad 1100 and the electrolyte 1110. In some embodiments, the feeding step 10100 of the aluminum feedstock 1180 includes flowing the aluminum feedstock 1180 into the molten metal pad 1100 via the cell access channel 1160.

[00154] In some embodiments, the impurities of the aluminum feedstock 1180 can include Cr, Cu, Fe, Mg, Mn, Ni, Si, Ti, and Zn. In some embodiments, the aluminum feedstock 1180 can have aluminum with up to 2 wt. % Mg, along with other impurities.

[00155] In some embodiments, additives (e.g., copper) are added to the aluminum feedstock 1180 to increase density and keep the metal of the aluminum feedstock 1180 on the bottom of the aluminum purification cell 1000 at the molten metal pad 1100. In some examples, the aluminum feedstock 1180 includes at least 5 wt. % copper, at least 10 wt. % copper, at least 15 wt. % copper, at least 20 wt. % copper, at least 25 wt. % copper, at least 30 wt. % copper, at least 35 wt. % copper, at least 40 wt. % copper, at least 45 wt. % copper, or at least 50 wt. % copper. Accordingly, the molten metal pad 1100 may include a relatively high amount of copper. In some embodiments, the molten metal pad 1100 includes at least 5 wt. % copper, at least 10 wt. % copper, at least 15 wt. % copper, at least 20 wt. % copper, at least 25 wt. % copper, at least 30 wt. % copper, at least 35 wt. % copper, at least 40 wt. % copper, or more.

[00156] In some embodiments, the feeding step 10100 includes feeding the aluminum feedstock 1180 continuously during operation of the aluminum purification cell 1000. In some embodiments, the feeding step 10100 includes periodically adding the aluminum feedstock 1180 into the aluminum purification cell 1000. In some embodiments, the feeding step 10100 includes metering aluminum feedstock 1180 into the aluminum purification cell 1000 at a first feed rate. The first feed rate may remain constant or may vary, including stopping and starting of the feeding of the aluminum feedstock 1180 to the aluminum purification cell 1000. In some embodiments, the feeding step 10100 includes adding the aluminum feedstock 1180 periodically to the aluminum purification cell 1000.

[00157] As noted above, the feeding step 10100 of the aluminum feedstock 1180 may be through an aluminum purification cell 1000. In some embodiments, the aluminum feedstock 1180 includes aluminum metal. In some embodiments, the aluminum feedstock 1180 includes at least one other metal than aluminum metal. In some embodiments, the aluminum feedstock 1180 includes a transition metal. In some embodiments, the aluminum feedstock 1180 includes at least 50 wt. % aluminum metal. In some embodiments, the aluminum feedstock 1180 includes at least 55 wt. % aluminum metal. In some embodiments, the aluminum feedstock 1180 includes at least 60 wt. % aluminum metal. In some embodiments, the aluminum feedstock 1180 includes at least 65 wt. % aluminum metal. In some embodiments, the aluminum feedstock 1180 includes at least 70 wt. % aluminum metal. In some embodiments, the aluminum feedstock 1180 includes at least 75 wt. % aluminum metal. In some embodiments, the aluminum feedstock 1180 includes at least 80 wt. % aluminum metal. In some embodiments, the aluminum feedstock 1180 includes at least 85 wt. % aluminum metal. In some embodiments, the aluminum feedstock 1180 includes at least 90 wt. % aluminum metal. In some embodiments, the aluminum feedstock 1180 includes at least 95 wt. % aluminum metal.

[00158] In some embodiments, the aluminum feedstock 1180 includes impurities. In some embodiments, the aluminum feedstock 1180 includes impurities of from 0.5 wt. % to 50.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 5.0 wt. % to 50.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 10.0 wt. % to 50.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 15.0 wt. % to 50.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 20.0 wt. % to 50.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 25.0 wt. % to 50.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 30.0 wt. % to 50.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 35.0 wt. % to 50.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 180 includes impurities of from 40.0 wt. % to 50.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 45.0 wt. % to 50.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 0.5 wt. % to 45.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 0.5 wt. % to 40.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 0.5 wt. % to 35.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 0.5 wt. % to 30.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 0.5 wt. % to 25.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 0.5 wt. % to 20.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 0.5 wt. % to 15.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 0.5 wt. % to 10.0 wt. % of the aluminum feedstock 1180. In some embodiments, the aluminum feedstock 1180 includes impurities of from 0.5 wt. % to 5.0 wt. % of the aluminum feedstock 1180.

[00159] In some embodiments, the aluminum feedstock 1180 is an aluminum alloy scrap. In some embodiments, the aluminum alloy scrap includes at least one of a Ixxx-series aluminum alloy, a 2xxx-series aluminum alloy, a 3xxx-series aluminum alloy, a 4xxx-series aluminum alloy, a 5xxx-series aluminum alloy, a 6xxx-series aluminum alloy, a 7xxx-series aluminum alloy, a 8xxx-series aluminum alloy, or any combinations thereof.

[00160] In some embodiments, the producing ions step 10440 includes producing aluminum ions in the electrolyte 1110 and reducing at least some of the aluminum ions at or near at least one cathode 1150 of the aluminum purification cell 1000. In some embodiments, the producing ions step 10440 step includes moving aluminum ions through the electrolyte 1110 toward the cathode 1150.

[00161] The method of the present disclosure includes producing purified aluminum 1120 from the aluminum feedstock 1180 by passing electrical current into the anode 190 through the electrolyte 1110 and into the cathode 1150. In some embodiments, the passing electrical current step 10420 includes passing direct current from the anode 1090 to the cathode 1150 through electrolyte 1110. For the producing step 10300, the anode 1090 and the cathode 1150 can be partially disposed in the electrolyte 1110 and the anode 1090 can be partially disposed in the molten metal pad 1100. Directing aluminum metal of the molten metal pad 1100 towards the electrolyte 1110 (e.g., the directing step 10200) can include flowing the aluminum metal towards the electrolyte 1110 and supplying an electric current to the anode 1090 (e.g., the passing electrical current step 10420).

[00162] In some embodiments, the method may include removing at least some of the top layer of the purified aluminum 1120 from the aluminum purification cell 1000 via the extraction port 1200. In some embodiments, the purified aluminum 1120 may be removed essentially continuously during operation of the aluminum purification cell 1. In some embodiments, the first removal rate may be controlled, for example, based at least in part on the second removal rate. In some embodiments, the purified aluminum 1120 may be removed periodically during operation of the aluminum purification cell 1000. In some embodiments, the removing step is completed with equipment configured to remove the purified aluminum 1120 product without contaminating the product (e.g., alumina, graphite, and/or TiEh tapping equipment).

[00163] The purified aluminum 1120 product above the electrolyte 1110 defines atop layer. In some embodiments, the purified aluminum 1120 product includes an aluminum purity of at least 99.5 wt. %. In some embodiments, the purified aluminum 1120 product includes an aluminum purity of at least 99.5 wt. % up to 99.999 wt. % aluminum. In some embodiments, the purified aluminum 1120 product includes an aluminum purity of at least 99.8 wt. % up to 99.999 wt. % aluminum. In some embodiments, the purified aluminum 1120 product includes an aluminum purity of at least 99.9 wt. % up to 99.999 wt. % aluminum. In some embodiments, the purified aluminum 1120 product includes an aluminum purity of at least 99.98 wt. % up to 99.999 wt. % aluminum. For example, the purified aluminum 1120 product can have at least 99.5 wt. % aluminum, or at least 99.75 wt. % aluminum, or at least 99.8 wt. % aluminum, or at least 99.85 wt. % aluminum, or at least 99.9 wt. % aluminum, or at least 99.95 wt. % aluminum.

[00164] In some embodiments, the purified aluminum 1120 product may be produced via the aluminum purification cell 1000 at an energy efficiency of 1 to 15 kWh/kg of purified aluminum. In some embodiments, the purified aluminum 120 product may be produced via the aluminum purification cell 1000 at an energy efficiency of 1 to 10 kWh/kg of purified aluminum. In some embodiments, the purified aluminum 1120 product may be produced via the aluminum purification cell 1000 at an energy efficiency of 1 to 8 kWh/kg of purified aluminum. In some embodiments, the purified aluminum 1120 product may be produced via the aluminum purification cell 1000 at an energy efficiency of 1 to 6 kWh/kg of purified aluminum. In some embodiments, the purified aluminum 1120 product may be produced via the aluminum purification cell 1000 at an energy efficiency of 1 to 4 kWh/kg of purified aluminum. In some embodiments, the purified aluminum 1120 product may be produced via the aluminum purification cell 1000 at an energy efficiency of 5 to 15 kWh/kg of purified aluminum. In some embodiments, the purified aluminum 1120 product may be produced via the aluminum purification cell 1000 at an energy efficiency of 10 to 15 kWh/kg of purified aluminum. In some embodiments, the purified aluminum 1120 product may be produced via the aluminum purification cell 1000 at an energy efficiency of 12 to 15 kWh/kg of purified aluminum.

[00165] In some embodiments, sludge 1190 may be produced due, at least in part, to the passing electrical current step 10420. The sludge 1190 may have a higher density than the molten metal pad 1100. As described above, the upper surface 1080 of the cell bottom 1060 may be sloped. In some embodiments, the slope may run from a refractory sidewall 1030 down towards the cell access channel 1160. Thus, the sludge 1190 may drain along the upper surface 1080 towards the cell access channel 1160. In some embodiments, the sludge 1190 may be removed from the cell chamber 1210 via the cell access channel 1160. In some embodiments, impurities may tend to collect in the molten metal pad 1100. Thus, the cell access channel 1160 may facilitate removal of at least a portion of the molten metal pad 1100. ii. Substrates having directing features

[00166] As explained above, the present disclosure relates to aluminum purification cells having substrates that comprise one or more directing features. Such substrates are described below in this section.

[00167] The present disclosure includes methods and products involving a titanium diboride (TiEh) substrate or a structure directing a TiEh wettable material in a predetermined direction using a directing feature. In some embodiments, the TiEh substrate structure can be covered with a solid aluminum metal before contacting the TiEh wettable material. When the TiEh wettable material contacts the TiEh substrate, the directing feature directs the TiEh wettable material in a predetermined direction. The directing feature can take many shapes and sizes. In some embodiments, the directing feature can be slots, grooves, pores, or combinations thereof. The TiEh substrate with the at least one directing feature can be used in a variety of applications including moving fluid in a product. In some embodiments, the TiEh wettable material may be any suitable metal for transfer via the TiEh substrates. In some embodiments, the TiEh wettable material is aluminum, such as aluminum alloy, metallic aluminum, and combinations thereof.

[00168] In one aspect, the present disclosure includes a product with a TiEh substrate that includes a directing feature, wherein the directing feature is configured to direct TiEh wettable material in a predetermined direction. In some embodiments, the TiEh wettable material includes aluminum. In some embodiments, the aluminum is selected from the group consisting of an aluminum alloy, metallic aluminum, and combinations thereof. In some embodiments, a surface of the TiEh substrate is at least partially covered in solid aluminum metal. In some embodiments, the directing feature is selected from the group consisting of slots, grooves, pores, and combinations thereof on the structure, e.g., the TiEh substrate. In some embodiments, the TiEh substrate has a solid geometric form. In some embodiments, the solid geometric form has at least one three-dimensional form of rectangle-shaped, square-shaped, triangle-shaped, oval-shaped, or oblong-shaped, among others. In some embodiments, the TiEh substrate has a non-symmetrical form. In some embodiments, the TiEh substrate is in the form of a plate.

[00169] In some embodiments, the TiEh substrate is configured for use in an aluminum purification cell. In some embodiments, the directing feature directs the TiEh wettable material via capillary action. In some embodiments, the directing feature includes pores. In some embodiments, the directing feature includes a porosity of the TiEh substrate. In some embodiments, the porosity ranges from about 1 to about 200 pores per inch (PPI). In some embodiments, the porosity is at least about 5 pores per inch (PPI), or at least about 10 pores per inch (PPI), or at least about 15 pores per inch (PPI), or at least about 20 pores per inch (PPI). In some embodiments, the porosity is not greater than about 175 pores per inch (PPI), or not greater than about 150 pores per inch (PPI), or not greater than about 125 pores per inch (PPI), or not greater than about 100 pores per inch (PPI), or not greater than about 80 pores per inch (PPI), or not greater than about 60 pores per inch (PPI), or not greater than about 50 pores per inch (PPI).

[00170] In some embodiments, the directing feature includes a structure having at least one groove. In some embodiments, the at least one groove extends partially into the Ti Eh substrate. In some embodiments, the dimensions of the at least one groove are predetermined. In some embodiments, a size and/or a shape of the at least one groove are predetermined. In some embodiments, a width (w) of the at least one groove ranges from about 10 pm to about 20 mm. In some embodiments, a groove depth (gd) of the at least one groove ranges from about 1 mm to about 10 mm. In some embodiments, a length (1) of the at least one groove ranges from about 1 cm to about 1 m. In some embodiments, a thickness (t) of the TiEh substrate ranges from about 5 mm to about 30 mm. In some embodiments, the directing feature includes at least two grooves in the TiEh substrate. In some embodiments, an edge-to-edge distance (d) between the at least two grooves ranges from about 1 mm to about 20 mm.

[00171] In another aspect, the present disclosure includes a product having (a) a TiEh substrate including at least one directing feature and (b) solid aluminum metal at least partially covering surfaces of the TiEh substrate. In some embodiments, the solid aluminum metal is at least partially contained within the at least one directing feature. In some embodiments, the TiB2 substrate includes a structure having a surface area, wherein a first portion of the surface area includes the at least one directing feature, and wherein a second portion of the surface area is absent of any directing feature. In some embodiments, the first portion of the surface area is at least partially covered by the solid aluminum metal. In some embodiments, the first portion of the surface area is at least 1% covered by the solid aluminum metal. In some embodiments, the second portion of the surface area is at least partially covered by the solid aluminum metal. In some embodiments, the second portion of the surface area is at least 1% covered by the solid aluminum metal. In some embodiments, the solid aluminum metal covering the second portion of the surface area is in the form of a film. In some embodiments, the film includes a thickness of from 1 pm to 500 pm. In some embodiments, the second portion of the surface area is absent of the solid aluminum metal.

[00172] In some embodiments, at least one directing feature includes a void volume, and wherein at least 1% of the void volume contains the solid aluminum metal. In some embodiments, the at least one directing feature is a structure having a slot, and wherein the solid aluminum metal is at least partially contained within the slot. In some embodiments, the at least one slot includes a slot volume, and wherein the solid aluminum metal occupies at least 1% of the slot volume. In some embodiments, the at least one directing feature is a groove, and wherein the solid aluminum metal is at least partially contained within the groove. In some embodiments, the at least one groove includes a groove volume, and wherein the solid aluminum metal occupies at least 1% of the groove volume.

[00173] In another aspect, the present disclosure includes a product with (a) a web of TiEh and (b) solid aluminum metal at least partially covering surfaces of the web of TiEh. In some embodiments, the web of TiEh defines a porosity of the web of TiEh. In some embodiments, the solid aluminum metal includes porosity. In some embodiments, the porosity of the web of TiB2 defines a porous volume of the TiEh, and wherein the solid aluminum metal occupies at least 1% of the porous volume.

[00174] In another aspect, the present disclosure includes a method including producing a TiEh product with at least one directing feature and directing a TiEh wettable material in a predetermined direction via the at least one directing feature. In some embodiments, the producing step includes creating the TiEh product having a plurality of pores. In some embodiments, the producing step includes creating a geometric feature. In some embodiments, the producing step includes machining the TiEh product or a TiEh product precursor to create the at least one directing feature. In some embodiments, the producing step includes extruding a TiEh feedstock into a TiEh product precursor wherein the TiEh product precursor includes the at least one directing feature therein. In some embodiments, the TiEh product precursor is a green TiEh material. In some embodiments, the method includes exposing the green TiEh material to an elevated temperature, thereby creating the TiEh substrate. In some embodiments, the at least one directing feature in the TiEE substrate may include grooves, slots, channels, or combinations thereof.

[00175] In another aspect, the present disclosure includes an aluminum purification cell having any of the TiEh substrates described herein. In some embodiments, at least one of the TiB2 substrates is an electrode. In some embodiments, at least one of the TiEE substrates is a directing apparatus, wherein the directing apparatus is configured to direct liquid aluminum metal (e.g., molten aluminum metal) in a predetermined direction in an absence of an applied electrical current.

[00176] As used herein, “slot” means a geometric feature that extends through a thickness of a TiEb substrate

[00177] As used herein, “groove” means a geometric feature that extends partially through, but not all the way through, through a thickness of a TiEh substrate

[00178] As used herein, “geometric feature” means a predetermined shape created in a TiEh substrate. Examples include slots and grooves of any shape or size.

[00179] As used herein, “TiEh wettable material” means having a contact angle with TiEh of not greater than 90 degrees.

[00180] As used herein, “TiEh substrate” means a substrate made of TiEh that is capable of including at least one directing feature. Examples of TiEh substrates include blocks, plates, rod, wires, and wools, among others, made of TiEh. In one embodiment, a TiEh substrate consists essentially of TiEh.

[00181] As used herein, “aluminum covered TiEh substrate” means a TiEh substrate at least partially covered by aluminum metal, wherein the aluminum metal is metallic aluminum and/or an aluminum alloy. In one embodiment, the aluminum metal is at least partially contained in at least one directing feature of a TiEh substrate. In one embodiment, the aluminum metal at least partially covers outer surfaces of a TiEh substrate. In one embodiment, the aluminum metal covers at least 5% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 10% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 15% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 20% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 25% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 30% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 35% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 40% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 45% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 50% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 55% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 60% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 65% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 70% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 75% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 80% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 85% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 90% of the surface area of a TiEh substrate. In one embodiment, the aluminum metal covers at least 91% of the surface area of a TiB2 substrate. In one embodiment, the aluminum metal covers at least 92% of the surface area of a TiB2 substrate. In one embodiment, the aluminum metal covers at least 93% of the surface area of a TiB2 substrate. In one embodiment, the aluminum metal covers at least 94% of the surface area of a TiB2 substrate. In one embodiment, the aluminum metal covers at least 95% of the surface area of a TiB2 substrate. In one embodiment, the aluminum metal covers at least 96% of the surface area of a TiB2 substrate. In one embodiment, the aluminum metal covers at least 97% of the surface area of a TiB2 substrate. In one embodiment, the aluminum metal covers at least 98% of the surface area of a TiB2 substrate. In one embodiment, the aluminum metal covers at least 99% of the surface area of a TiB2 substrate. In one embodiment, the aluminum metal covers at least 100% of the surface area of a TiB2 substrate.

[00182] As used herein, “plated material” and the like means a film, coating, or other thin covering in contact with at least a portion of an outer surface of a substrate, and irrespective how the plated material was produced on the substrate, i.e., plating includes all manners of applying a film, coating, or thin covering to a substrate.

[00183] FIG. 1A illustrates one embodiment of a method 100 for directing a TiB2 wettable material in a predetermined direction using a directing feature. Step 102 is an optional step as indicated by the dashed lines of the box in FIG. 1A. The step 102 includes covering a TiB2 substrate with solid aluminum metal. Varying amount of the TiB2 substrate can be covered with solid aluminum metal. In some embodiments, all of the TiB2 substrate can be covered. Some portions of the TiB2 substrate can be covered with solid aluminum metal while other portions of the TiB2 substrate are absent solid aluminum. The solid aluminum metal coverage can vary depending on the application of the TiB2 substrate. Step 104 includes contacting the TiB2 substrate with a TiEh wettable material. Step 106 includes directing the TiEh wettable material in a desired direction.

[00184] FIG. IB illustrates another embodiment of a method 110 for directing a TiB2 wettable material in a predetermined direction using a directing feature. The producing step 112 includes producing a TiB2 product with at least one directing feature. The producing step 112 can include creating a TiB2 product structure having a plurality of pores. The producing step 112 can include creating a geometric feature. The producing step 112 can include machining a TiB2 product or a TiB2 product precursor structure to create at least one directing feature. The directing feature found in or on the product or product precursor structure can be slots, grooves, pores, and combinations thereof. The directing features can include a void volume. In some embodiments, at least 1% of the void volume contains the solid aluminum metal. The directing feature can direct the TiB2 wettable material via capillary action.

[00185] The producing step 112 can include extruding a TiB2 feedstock into a TiB2 product precursor wherein the TiB2 product precursor includes at least one directing feature therein. In some embodiments, the TiB2 product precursor is a green TiB2 material. The producing step 112 can include exposing the green TiB2 material to an elevated temperature, thereby creating the TiB2 substrate. The directing step 114 includes directing a TiB2 wettable material in a predetermined direction via the at least one directing feature.

[00186] FIG. 2A is a perspective view of an embodiment of a product 200 with a TiB2 substrate 202 having a plurality of slots 206 as directing features. The slots 206 are defined between prongs 204. The TiB2 substrate 202 also includes a base 208 and a tip 210. The slots 206 are configured to direct TiB2 wettable material in a predetermined direction. The TiB2 wettable material can include aluminum, such as an aluminum alloy, metallic aluminum, and combinations thereof.

[00187] FIG. 2B is a first side view of the embodiment shown in FIG. 2A. FIG. 2B shows a side view of the product 200 showing the prongs 204. The prongs 204 include a length (1) that extends from the top of the base 208 to the end of the tip 210. The tip 210 can have any of a variety of geometries including a point, a rounded curvature, or a jagged edge, among others. [00188] FIG. 2C is an enlarged partial section view of the embodiment shown in FIG. 2 A indicated by the circle of dashed lines in FIG. 2A The partial top view only shows two of the prongs 204. That is, FIG. 2C shows a first prong 204A and a second prong 204B defining a first slot 206A. The first slot 206A is defined by an inner surface of the first prong 204A and an inner surface of the second prong 204B. [00189] FIG. 3 A is a front view of an embodiment of a product 300 with a TiEh substrate 302 having a slot 306 as a directing feature. The slot 306 is defined by a first prong 304A and a second prong 304B (collectively, prongs 304). The TiEh substrate 302 also includes a base 308 and a tip 310. The slots 306 are configured to direct TiEh wettable material in a predetermined direction. A width (w) of one of the prongs is also shown.

[00190] FIG. 3B is a section view of a cross-section taken along the dashed line 3B shown in FIG. 3A. FIG. 3B shows a thickness (t) of the prongs 304 and a distance (d) the slot 306 extends between the inner surface of the first prong 304A and the inner surface of the second prong 304B. FIG. 3C is a first side view of the embodiment (e.g., the product 300) shown in FIG. 3A. FIG. 3C displays a length (1) of the prongs 304.

[00191] FIGs. 2A-2C and FIGs. 3A-3C will be described together, as they are similar. The embodiment of FIGs. 2A-2C differs from the embodiment of FIGs. 3A-3C in the number of prongs 204/304, the number of slots 206/306, and thickness (t) of the prongs 204/304.

[00192] The dimensions of the slots 206/306 are predetermined. In some embodiments, the slot 206A/306 extends an entire length (1) of the first prong 206A/306A and an entire length (1) of the second prong 206B/306B. The entire length (1) of the first prong 206A/306A and the entire length (1) of the second prong 204B/304B can range from about 0.01 meters to about 1 meter. A thickness (t) of the first prong 204A/304A and a thickness (t) of the second prong 204B/304B can range from about 1 mm to about 20 mm. The slot 206A/306 extends a distance (d) between the inner surface of the first prong 204A/304A and the inner surface of the second prong 204B/304B. In some embodiments, the distance (d) ranges from about 20 pm to about 20 mm. A width (w) of the prongs 204/304 (e.g., first prong 204A/304A and the second prong 204B/304B) can range from about 1 mm to about 20 mm.

[00193] The prongs 204/304 can vary in dimension from one another. The prongs 204/304 can vary in length (1), thickness (t), and width (w) from one another. Similarly, the distance (d) of the slot 206/306 can vary from one another. In some embodiments, in comparison to the second prong 204B/304B, the first prong 204A/304A can have a larger length (1) and width (w) and a smaller thickness (t).

[00194] The slots 206/306 extend through a thickness of the TiB2 substrate 202/302. The number of slots can vary. In some embodiments, there can be one slot as shown in the examples of FIG. 3A, FIG. 3B, and FIG. 3C. There can also be two or more slots. The number of slots can vary depend on the intended application of the TiB2 substrate 202/302. In the example shown in FIG. 2A, FIG. 2B, and FIG. 2C, there are six slots [00195] The TiEh substrate 202/302 can be at least partially covered in solid aluminum metal. The slots 206/306 are the directing feature for the TiEh substrate 202/302. Other directing features, such as grooves, pores, and combinations thereof, can be included with the TiB2 substrate 202.

[00196] The TiEh substrate 202/302 can have any suitable structure, size, or shape depending on application. The TiEh substrate 202/302 can have a solid geometric form. The geometric form surface can include surfaces of at least one of rectangle-shaped, square-shaped, triangle-shaped, oval-shaped, or oblong-shaped surfaces, among others. The TiEh substrate 202/302 can also be a non-symmetrical form. The TiEh substrate 202/302 can also be in the form of a plate. The TiEh substrate 202/302 can use the slots 206/306, the directing feature, to direct TiEh wettable material via capillary action.

[00197] The TiEh substrate 202/302 can be used in a variety of applications. In some embodiments, the TiEh substrate 202/302 can be configured for use in an aluminum purification cell. In an aluminum purification cell, the cathode is at the top of the cell, the anode is at the bottom of the cell, and the purified aluminum moves to the top of cell. One example of an aluminum purification cell can be found in commonly owned US Patent No. 10,407,786, entitled Systems and Methods for Purifying Aluminum, and filed on February 11, 2016.

[00198] FIG. 4A is a front view of an embodiment of a product 400 with a TiEh substrate 402 having a plurality of grooves 406 as directing features. FIG. 4B is a first side view of the embodiment shown in FIG. 4A. FIG. 4C is an enlarged partial section view of the embodiment shown in FIG. 4A indicated by the circle of dashed lines in FIG. 4A. FIG. 4D is an alternative configuration of the plurality of grooves of the embodiment shown in FIG. 4C.

[00199] The product 400 is similar to the product 200/300. Differences are described herein. In some embodiments, the directing feature of the product 200/300 is slots 206/306; in contrast, the directing feature of the product 400 is at least one groove 406.

[00200] The grooves 406 extend partially into the TiB2 substrate 402. The dimensions of the grooves 406 are predetermined. In some embodiments, a size and/or a shape of the grooves 406 are predetermined. A width (w) of the grooves 406 ranges from about 10 pm to about 20 mm. A groove depth (gd) of the grooves 406 ranges from about 1 mm to about 10 mm. A length (1) of the grooves 406 ranges from about 1 cm to about 1 m. A thickness (t) of the TiB2 substrate 402 ranges from about 5 mm to about 30 mm. An edge-to-edge distance (d) between the grooves 406 ranges from about 1 mm to about 20 mm. [00201] As shown in FIG. 4C, the directing feature includes at least two grooves 406 in the TiB2 substrate 402. Specifically, the directing feature includes three grooves 406. FIG. 4C shows a first groove 406A, a second groove 406B, a third groove 406C (collectively, grooves 406).

[00202] The grooves 406 can be arranged in any pattern. The grooves 406 can also have the same dimensions as one another or have different dimensions from one another. The grooves 406 can also be located on the sides of the TiB2 substrate 402, not only on the front side and back side as shown in FIG. 4C. FIG. 4D shows a first groove 406A’, a second groove 406B’, a third groove 406C’ (collectively, grooves 406’). FIG. 4D shows alternative dimensions and arrangement of the grooves 406’ as compared to the grooves 406 of FIG. 4C. FIG. 4C shows the grooves having the same dimensions as one another and arranged in a pattern where the grooves 406 are positioned in an alternating pattern between a front side and back side of the TiB2 substrate 402. FIG. 4D shows that the grooves 406’ can have different dimensions. In some embodiments, the second groove 406B’ is the largest groove with a groove depth that extends further than halfway through the TiB2 substrate 402. The third groove 406C’ is the smallest groove and extends less than halfway through the TiB2 substrate 402’.

[00203] FIG. 5 A is a side view of another embodiment of a product 500 with a TiB2 substrate 502 having a plurality of pores as directing features. FIG. 5B is a close-up view of a portion of the embodiment shown in FIG. 5A indicated by dashed lines in FIG. 5A. As shown in FIG. 5A, the TiB2 substrate is a web, e.g., a sponge-like structure, of TiB2. The pores 504 are defined by the TiB2 substrate 502, the web of TiB2. The directing features of the product 500 can be a porosity of the TiB2 substrate 502. The porosity of the TiB2 substrate 502 can range from about 1 pore to about 200 pores per square inch (PPI). In some embodiments, the porosity is at least about 5 pores per inch (PPI), or at least about 10 pores per inch (PPI), or at least about 15 pores per inch (PPI), or at least about 20 pores per inch (PPI). In some embodiments, the porosity is not greater than about 175 pores per inch (PPI), or not greater than about 150 pores per inch (PPI), or not greater than about 125 pores per inch (PPI), or not greater than about 100 pores per inch (PPI), or not greater than about 80 pores per inch (PPI), or not greater than about 60 pores per inch (PPI), or not greater than about 50 pores per inch (PPI).

[00204] The porosity of the TiB2 substrate 502 can have any suitable porous structure. The porosity of the TiB2 substrate 502 can be an interconnected porous structure, wherein at least some of the pores are in fluid communication with one another and facilitate movement of the wettable material from a first location to a second location (e.g., from a first predetermined location to a second predetermined location). Accordingly, the interconnected porous structure may be considered an open pore structure. In some embodiments, the porosity of the TiEh substrate 502 has a random porous structure. In some embodiments, the porosity of the TiEh substrate 502 can be an oriented porous structure. In some embodiments, the porosity of the oriented porous structure of the TiEh substrate 502 can have a porosity gradient. In some embodiments, the porosity gradient of the oriented porous structure of the TiEh substrate 502 can change along a three-dimensional gradient (i. e. , the porosity gradient can change along the X-axis, Y-axis, and Z-axis of the TiEh substrate 502). In some embodiments, the porosity gradient of the oriented porous structure of the TiEh substrate 502 increases or decreases toward the center of the TiEh substrate 502. In some embodiments, the porosity gradient of the oriented porous structure of the TiEh substrate 502 can increase and/or decrease through the TiEh substrate 502. For instance, the porosity gradient of the oriented porous structure of the TiEh substrate 502 can increase, decrease, and then increase from one end of the TiEh substrate 502 to another end of the TiEh substrate 502.

[00205] FIG. 6A is a perspective view of an embodiment of a product 600 with a TiEh substrate 602 having a plurality of slots 606 as directing features and a solid aluminum metal 612 covering the TiEh substrate 602. A portion of the solid aluminum metal 612 is shown around or transparent in FIG. 6A to reveal the surface structure of the substrate 602. The product 600 includes prongs 604, a base 608, and a tip 610. FIG. 6B is a first side view of a cross-section taken along the arrows 6B shown in FIG. 6A. FIG. 6C is a is an enlarged partial section view of the embodiment shown in FIG. 6A indicated by the circle of dashed lines in FIG. 6A. The embodiments shown in FIGs. 2A, 2B, and 2C is the same or similar as the embodiment of FIGs. 6 A, 6B, and 6C except for the differences described herein. In some embodiments, the embodiment shown in FIGs. 6A, 6B, and 6C includes solid aluminum metal 612 covering the TiB2 substrate structures shown in FIGs. 2A, 2B, and 2C (e.g., the TiB2 substrate 202). For FIGs. 6A, 6B, and 6C, similar features of FIGs. 2A, 2B, and 2C will not be repeated. FIG. 6A and FIG. 6B show the solid aluminum metal 612 completely covering the TiB2 substrate 602. FIG. 6C shows the solid aluminum metal 612 completely occupying the slot 606 A between a first prong 604 A and a second prong 604B.

[00206] In some embodiments, the solid aluminum metal 612 at least partially covers the surface of the TiB2 substrate 602 and/or the solid aluminum metal 612 is at least partially contained within the slot 606. In some embodiments, the solid aluminum metal 612 covers at least 1% of the surface of the TiB2 substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 5% of the surface of the TiB2 substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 10% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 15% of the surface of the TiB2 substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 20% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 25% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 30% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 35% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 40% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 45% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 50% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 55% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 60% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 65% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 70% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 75% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 80% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 85% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 90% of the surface of the Ti Eh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 95% of the surface of the TiEh substrate 602. In some embodiments, the solid aluminum metal 612 covers at least 100% of the surface of the TiEh substrate 602.

[00207] In some embodiments, the solid aluminum metal 612 is at least partially contained within the slot 606. In some embodiments, where the slot 606 has a slot volume, the solid aluminum metal 612 occupies at least 1% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 5% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 10% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 15% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 20% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 25% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 30% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 35% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 40% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 45% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 50% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 55% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 60% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 65% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 70% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 75% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 80% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 85% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 90% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 95% of the slot volume. In some embodiments, the solid aluminum metal 612 occupies at least 100% of the slot volume.

[00208] Varying amounts of the solid aluminum metal 612 are shown occupying the slots 606 and the TiEh substrate 602 in the embodiments shown in FIGs. 6A-6N.

[00209] FIG. 6D is a cross-sectional side view of an embodiment of a product 600’ with a TiB2 substrate 602’ having a plurality of slots 606A’ as directing features and a solid aluminum metal 612’ covering an upper portion of the TiEh substrate 602’. FIG. 6E is a partial crosssection taken along the dashed line 6E as shown in FIG. 6D where only one of the slots 606A’ of the plurality of slots 606A’ is shown. The cross-section is along the upper portion of the TiEh substrate 602’ where there is solid aluminum metal 612’. FIG. 6F is a partial a crosssection taken along the dashed line 6F shown in FIG. 6D where only one of the slots 606A’ of the plurality of slots 606A’ is shown. The cross-section is along the lower portion of the TiEh substrate 602’ where there is no solid aluminum metal 612’.

[00210] FIG. 6G is a cross-sectional side view of an embodiment of a TiEh substrate 602” having a plurality of slots 606A”as directing features and a solid aluminum metal 612” covering half of the TiEh substrate 602”, the front portion. The solid aluminum metal 612” covers the front half of the base 608” and the tip 610”. FIG. 6H is a partial cross-section taken along the dashed line 6H as shown in FIG. 6G where only one of the slots 606A” of the plurality of slots 606A” is shown. The solid aluminum metal 612” covers the front half of the slot 606 A”.

[00211] FIG. 61 is a side view of an embodiment of a TiEh substrate 602’” with a base 608’” and tip 610’” having a plurality of slots 606A’” as directing features and a solid aluminum metal 612’” in the plurality of slots 606A’”. FIG. 6J is a partial cross-section taken along the dashed line 6J as shown in FIG. 61 where only one of the slots 606A’ ’ ’ of the plurality of slots 606A’” is shown. In the embodiment of FIG. 61 and 6J, there is no solid aluminum metal 612”’ on the exterior surface of the TiEh substrate 602’”. The solid aluminum metal 612’” completely fills the slot volume of the slot 606A’”.

[00212] FIG. 6K is a front view of an embodiment of a TiEh substrate 602”” having a plurality of slots 606 A, 606B, and 606B (collectively, slots 606””) as directing features and a solid aluminum metal 612”” covering some or none of the slots 606. FIG. 6L is a first side view of the embodiment shown in FIG. 6K. FIG. 6K shows the TiB2 substrate 602”” with a base 608”” and atip 610””. The slots 606”” have varying lengths, thicknesses, and amounts of the solid aluminum metal 612””.

[00213] For slot 606A, the slot length does not extend to the tip 610” ” of the TiB2 substrate 602””. The top portion of the slot 606A does not contain the solid aluminum metal 612””. The bottom portion of the slot 606A contains the solid aluminum metal 612””. For slot 606B, the slot length extends from the top of the base 608”” to the tip 610””. The slot 606B does not contain the solid aluminum metal 612””. Slot 606C does not start from the same place as slots 606A and 606B. The beginning of slot 606C starts further up the TiB2 substrate 602””. Slot 606C has solid aluminum metal 612”” at the bottom and top, but not in the middle of the slot 606C.

[00214] FIG. 6M is a front view of an embodiment of a TiB2 substrate 602’”” with asurface area 620” ’ ’ ’ having a first portion 622” ” ’ of the surface area 620’ ” ” with a plurality of slots 606’”” as directing features and a second portion 624’”” of the surface area 620’”” being absent of any directing feature. Prongs 604’”” define the plurality of slots 606’””. FIG. 6N is a first side view of the embodiment shown in FIG. 6M with the second portion 624’”” of the surface area 620’”” being absent of any directing feature.

[00215] The TiB2 substrate 602’”” includes a surface area 620’””, wherein a first portion 622’”” of the surface area 620’”” includes the at least one directing feature, and wherein a second portion 624’”” of the surface area 620’”” is absent of any directing feature.

[00216] In some embodiments, the first portion 622’”” of the surface area 620’”” is at least partially covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 1% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 5% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 10% covered by solid aluminum metal. In some embodiments, the first portion 622””’ of the surface area 620””’ is at least 15% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 20% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 25% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 30% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 35% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 40% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 45% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 50% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 55% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 60% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 65% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 70% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 75% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 80% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 85% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 90% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 95% covered by solid aluminum metal. In some embodiments, the first portion 622’”” of the surface area 620’”” is at least 100% covered by solid aluminum metal.

[00217] In some embodiments, the second portion 624’ ” ” of the surface area 620’ ” ” is at least partially covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 1% covered by solid aluminum metal. In some embodiments, the second portion 624’ ” ” of the surface area 620” ” ’ is at least 5% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 10% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 15% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 20% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 25% covered by solid aluminum metal. In some embodiments, the second portion 624””’ of the surface area 620””’ is at least 30% covered by solid aluminum metal. In some embodiments, the second portion 624’ ” ” of the surface area 620’ ” ” is at least 35% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 40% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 45% covered by solid aluminum metal. In some embodiments, the second portion 624” ” ’ of the surface area 620’”” is at least 50% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 55% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 60% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 65% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 70% covered by solid aluminum metal. In some embodiments, the second portion 624’ ” ” of the surface area 620’ ” ” is at least 75% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 80% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 85% covered by solid aluminum metal. In some embodiments, the second portion 624” ” ’ of the surface area 620’”” is at least 90% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 95% covered by solid aluminum metal. In some embodiments, the second portion 624’”” of the surface area 620’”” is at least 100% covered by solid aluminum metal.

[00218] In some embodiments, the solid aluminum metal covering the first portion 622’ ” ” and/or the second portion 624’”” of the surface area 620’”” is in the form of a film. In some embodiments, the film includes a thickness of from 1 pm to 500 pm. In some embodiments, the first portion 622’ ” ” and/or the second portion 624” ” ’ of the surface area 620” ” ’ is absent of the solid aluminum metal.

[00219] FIG. 7A is a front view of an embodiment of a product 700 with a TiEh substrate 702 having a slot 706 as a directing feature and a solid aluminum metal 712 covering the TiEh substrate 702. A portion of the solid aluminum metal 712 is shown around or transparent in FIG. 7A to reveal the surface structure of the substrate 702. A first prong 704A and a second prong 704B define the slot 706 extending upward from the base 708. FIG. 7B is a cross-section taken along the dashed line 7B shown in FIG. 7A. FIG. 7C is a first side view of a cross-section taken along the 7C shown in FIG. 7 A. [00220] FIG. 7D is a front view of an embodiment of a product 700’ of a TiEh substrate 702’ having a slot 706’ as a directing feature and a solid aluminum metal 712’ covering a portion of the slot 706’. A first prong 704A’ and a second prong 704B’ extend upwards from a base 708’, thereby defining the slot 706’. FIG. 7E is a cross-section taken along the dashed line 7E shown in FIG. 7D. As shown in FIG. 7E, a middle portion 714’ of the slot 706’ is absent the solid aluminum metal 712’. A front portion and a back portion of the slot 706’ are shown as having the solid aluminum metal 712’. FIG. 7F is a first side view of the embodiment shown in FIG.

7D.

[00221] The embodiment shown in FIGs. 7D, 7E, and 7F and the embodiment shown in FIGs. 7A, 7B, and 7C are the same or similar except for differences discussed herein. For example, the amount of solid aluminum metal 712/712’ covering the TiB2 substrate 702/702’ differs between the embodiments. For the embodiment of FIGs. 7A, 7B, and 7C, the solid aluminum metal 712 covers almost the entirety of the TiB2 substrate 702. Only a portion of the base 708 is covered with solid aluminum metal 712. The slot 706 is fully contained with solid aluminum metal 712. In contrast, the embodiment of FIGs. 7D, 7E, and 7F have no solid aluminum metal 712’ on the exterior of the TiB2 substrate 702’. Only a portion of the slot 706’ is filled with solid aluminum metal 712’.

[00222] The embodiments of FIGs. 7A, 7B, 7C, 7D, 7E, and 7F are the same or similar as the embodiment of FIGs. 3 A, 3B, and 3C. One difference is that FIGs. 3A, 3B, and 3C are not shown with solid aluminum metal on the TiB2 substrate surfaces or covering at least portions thereof. The description of the solid aluminum metal from the embodiments of FIGs. 6A-6N also applies to the solid aluminum metal of FIGs. 7A-7F.

[00223] FIG. 8A is a front view of an embodiment of a product 800 with a TiB2 substrate 802 having a plurality of grooves 806 as directing features and a solid aluminum metal 812 covering the TiB2 substrate 802. A portion of the solid aluminum metal 812 is shown around or transparent in FIG. 8A to reveal the surface structure of the substrate 802. FIG. 8B is a first side view of a cross-section taken along line 8B shown in FIG. 8A. FIG. 8C is an enlarged partial section view of the embodiment shown in FIG. 8A as indicated by the dashed lines in FIG. 8A. FIG. 8C includes a view of a first groove 806A, a second groove 806B, and a third groove 806C.

[00224] FIG. 8D is a rear view of an embodiment of a product 800’ of a TiB2 substrate 802’ having a plurality of grooves 806’ as directing features and a solid aluminum metal 812’ covering the front half of the TiB2 substrate 802’. FIG. 8E is a first side view of a cross-section taken along the line 8E shown in FIG. 8D. FIG. 8F is an enlarged partial section view of the embodiment shown in FIG. 8D indicated by the circle of dashed lines in FIG. 8F.

[00225] The embodiment shown in FIGs. 8D, 8E, and 8F and the embodiment shown in FIGs. 8A, 8B, and 8C are the same or similar except for differences discussed herein. For example, the amount of solid aluminum metal 812/812’ covering the TiEh substrate 802/802’ differs between the embodiments. For the embodiment of FIGs. 8A, 8B, and 8C, the solid aluminum metal 812 is completely covering the TiB2 substrate 802. In contrast, the solid aluminum metal 812’ in FIGs. 8D, 8E, and 8F only covers the front half of the TiB2 substrate 802’.

[00226] The embodiments of FIGs. 8A, 8B, 8C, 8D, 8E, and 8F are the same or similar as the embodiment of FIGs. 4A, 4B, 4C and 4D. One difference is that FIGs. 4A, 4B, 4C, and 4D are not shown with solid aluminum metal on the TiB2 substrate. FIGs. 8A, 8B, 8C, 8D, 8E, and 8F are shown with solid aluminum metal 812/812’ on the TiB2 substrate. The description of the solid aluminum metal 612/712 from the embodiments of FIGs. 6A-6N and 7A-7F also applies to the solid aluminum metal 812/812’ of FIGs. 8A-8F.

[00227] For FIGs. 8A-8F, the at least one directing feature is a groove 806/806’, and the solid aluminum metal 812/812’ is at least partially contained within the groove 806/806’. The at least one groove 806/806’ includes a groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 1% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 5% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 10% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 15% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 20% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 25% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 30% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 35% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 40% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 45% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 50% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 55% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 60% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 65% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 70% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 75% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 80% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 85% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 90% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 95% of the groove volume. In some embodiments, the solid aluminum metal 812/812’ occupies at least 100% of the groove volume. [00228] FIG. 9 is a close-up view of a portion of an embodiment of a product 900 of a TiEh substrate 902 with pores 904 and solid aluminum metal 906, in accordance with some embodiments. In some embodiments, the TiEh substrate 902 is a web, e.g., a sponge-like structure, of TiEh.

[00229] In some embodiments, the product 900 includes a TiEh substrate 902 of a web of TiB2 and solid aluminum metal 906 at least partially covering surfaces of the web of TiEh substrate 902. The web of the TiEh substrate 902 defines pores 904 within the web of TiEh.

[00230] In some embodiments, the solid aluminum metal 906 has a porosity. The solid aluminum metal 906 may be at an elevated temperature when the solid aluminum metal 906 is filled in the pores 904. When the solid aluminum metal 906 cools, there may be space (e.g., pores or voids) between the solid aluminum metal 906 and the pores of the TiEh substrate 902. The pores 904 have a porosity of the Ti Eh substrate 902 web defining a porous volume of the TiEh substrate 902. In some embodiments the solid aluminum metal 906 occupies at least 1% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 5% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 10% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 15% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 20% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 25% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 30% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 35% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 40% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 45% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 50% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 55% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 60% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 65% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 70% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 75% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 80% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 85% of the porous volume. In some embodiments the solid aluminum metal 906 occupies at least 90% of the porous volume.

[00231] The porosity of the TiEh substrate 902 can have any suitable porous structure. The porosity of the TiEh substrate 902 can be an interconnected porous structure, wherein at least some of the pores are in fluid communication with one another and facilitate movement of the wettable material from a first location to a second location (e.g., from a first predetermined location to a second predetermined location). Accordingly, the interconnected porous structure may be considered an open pore structure. In some embodiments, the porosity of the TiEh substrate 902 has a random porous structure. In some embodiments, the porosity of the TiEh substrate 902 can be an oriented porous structure. In some embodiments, the porosity of the oriented porous structure of the TiEh substrate 902 can be a porosity gradient. In some embodiments, the porosity gradient of the oriented porous structure of the TiEh substrate 902 can change along a three-dimensional gradient (i. e. , the porosity gradient can change along the X-axis, Y-axis, and Z-axis of the TiEh substrate 902). In some embodiments, the porosity gradient of the oriented porous structure of the TiEh substrate 902 increases or decreases toward the center of the TiEh substrate 902. In some embodiments, the porosity gradient of the oriented porous structure of the TiEh substrate 902 can increase and/or decrease through the TiEh substrate 902. For instance, the porosity gradient of the oriented porous structure of the TiEh substrate 902 can increase, decrease, and then increase from one end of the TiEh substrate 902 to another end of the TiEh substrate 902.

[00232] An aluminum purification cell can include any of the TiEh substrates described herein. In some embodiments, at least one of the TiEh substrates is an electrode for the aluminum purification cell. In some embodiments, at least one of the TiEh substrates is a directing apparatus, where the directing apparatus is configured to direct liquid aluminum metal in a predetermined direction in an absence of an applied electrical current.

[00233] A product can include a TiEh substrate, as described herein, with at least one directing feature and solid aluminum metal at least partially covering surfaces of the TiEh substrate. The solid aluminum metal can be at least partially contained within the at least one directing feature. In some embodiments, at least one directing feature incudes a void volume. In some embodiments, at least 1% of the void volume contains the solid aluminum metal. In some embodiments, at least 5% of the void volume contains the solid aluminum metal. In some embodiments, at least 10% of the void volume contains the solid aluminum metal. In some embodiments, at least 15% of the void volume contains the solid aluminum metal. In some embodiments, at least 20% of the void volume contains the solid aluminum metal. In some embodiments, at least 25% of the void volume contains the solid aluminum metal. In some embodiments, at least 30% of the void volume contains the solid aluminum metal. In some embodiments, at least 35% of the void volume contains the solid aluminum metal. In some embodiments, at least 40% of the void volume contains the solid aluminum metal. In some embodiments, at least 45% of the void volume contains the solid aluminum metal. In some embodiments, at least 50% of the void volume contains the solid aluminum metal. In some embodiments, at least 55% of the void volume contains the solid aluminum metal. In some embodiments, at least 60% of the void volume contains the solid aluminum metal. In some embodiments, at least 65% of the void volume contains the solid aluminum metal. In some embodiments, at least 70% of the void volume contains the solid aluminum metal. In some embodiments, at least 75% of the void volume contains the solid aluminum metal. In some embodiments, at least 80% of the void volume contains the solid aluminum metal. In some embodiments, at least 85% of the void volume contains the solid aluminum metal. In some embodiments, at least 90% of the void volume contains the solid aluminum metal. In some embodiments, at least 95% of the void volume contains the solid aluminum metal. In some embodiments, at least 100% of the void volume contains the solid aluminum metal.

[00234] Although the present disclosure generally refers to TiEh substrates, other ceramic and/or cermet substrates having directing features may be used. Any ceramic and/or cermet substrate having a directing feature can be used with any wettable metal. In some embodiments, any wettable metal can be any suitable metal for transfer via the ceramic and/or cermet substrates. In some embodiments, the suitable metal may be aluminum, such as aluminum alloy, metallic aluminum, and combinations thereof. In one aspect, the present disclosure relates to a product with a ceramic substrate or a cermet substrate having a directing feature, wherein the directing feature is configured to direct ceramic wettable material or cermet wettable material in a predetermined direction. In some embodiments, the substrate is a ceramic substrate. In some embodiments, the ceramic substrate is one of a TiEh substrate, a ZrEh substrate, or a HfEh substrate. In some embodiments, the ceramic wettable material is aluminum, such as aluminum alloy, metallic aluminum, and combinations thereof.

[00235] While some of the above disclosures have been made relative to TiEh and aluminum, the apparatus, systems, and methods described herein are applicable to other ceramic and/or cermet materials other than TiEh. For instance, the disclosures herein may be equally applicable to other metal borides (e.g., metal diborides) having metal wetting capabilities, such as ZrEh and HfEh, just to name two, both of which are aluminum wettable materials.

Hi. Start-Up of the Aluminum Purification Cell 1000

[00236] During the start-up of the aluminum purification cell 1000, the electrodes of the aluminum purification cell 1000 (e.g., the anode 1090 and/or the cathode 1150) can be damaged. When the electrodes are not protected, outside contaminants, such as the electrolyte 1110, can damage the electrodes. When the aluminum purification cell 1000 is running at steady state, the wetting of the electrodes via the molten metal of the molten metal pad 1100 can provide protection. In some embodiments, when the aluminum purification cell 1000 is past the start-up phase and is running at steady state or close to running at steady state, the molten metal of the molten metal pad 1100 can wet and cover the electrodes providing protection from contaminants. In some embodiments, the molten metal pad 1100 of the aluminum purification cell 1000 can be either the bottom liquid (protecting the anode 1090) or the top liquid (protecting the cathode 1150).

[00237] In some embodiments, before the aluminum purification cell 1000 can reach steady state, the electrodes of the aluminum purification cell 1000 can be provided protection by other methods. For example, the electrodes can be covered in solid aluminum metal as described in Section ii. The solid aluminum metal on the electrodes can provide a barrier to outside contaminants. During start-up, the temperature of the electrodes of the aluminum purification cell 1000 begins to increase. As the temperature increases past the melting point temperature of the solid aluminum metal on the electrodes, the solid aluminum metal will phase transition from a solid to a liquid. During the phase transition from solid to liquid, the liquid will begin to preferentially wet the electrodes and move in the predetermined direction via the directing feature(s) of the electrodes (e.g., the predetermined direction is vertical and/or horizontal). The liquid aluminum metal that was previously solid and covering the electrodes will facilitate the flow of molten metal from the molten metal pad 1100. During steady state operation of the aluminum purification cell 1000, the liquid metal from the solid aluminum metal and the molten metal pad 1100 will cover the electrodes and provide protection from outside contaminants.

[00238] In some embodiments, the aluminum purification cell 1000 is first heated up empty and then, liquid bath and liquid aluminum are added to the aluminum purification cell 1000. In some embodiments, start-up of the aluminum purification cell 1000 may include a dry bath (i.e., an un-melted bath) due to the electrodes being protected by the solid aluminum metal coverage at the initial start-up. During startup of the aluminum purification cell 1000, the dry bath in the aluminum purification cell 1000 can be melted during the cell preheat cycle.

[00239] In some embodiments, a method of using the aluminum purification cell 1000 includes restricting or preventing attack of the anode 1090 and/or the cathode 1150 (e.g., anon- carbonaceous substrate) via the electrolyte 1110 of the aluminum purification cell 1000. In some embodiments, restricting or preventing includes at least partially covering the anode 1090 and/or the cathode 1150 by the wettable material (e.g., the molten material from the molten metal pad 1100). The restricting or preventing includes covering at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, at least 90%, at least 95%, or at least 99% of the surface area of the anode 1090 and/or the cathode 1150 by the wettable material. The wettable material can restrict or prevent contacting of outer surfaces of the anode 1090 and/or the cathode 1150 by the electrolyte 1110.

[00240] In some embodiments, restricting or preventing attack of the anode 1090 and/or the cathode 1150 (e.g., a non-carbonaceous substrate) includes when a temperature of the non- carbonaceous substrate is less than a melting point temperature of the solid aluminum metal. In some embodiments, the restricting or preventing can be accomplished by at least partially covering the anode 1090 and/or the cathode 1150 (e.g., a non-carbonaceous substrate) by the solid aluminum. For example, restricting or preventing can include covering at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, at least 90%, at least 95%, or at least 99% of the surface area of the anode 1090 and/or the cathode 1150 (e.g., a non-carbonaceous substrate) by the solid aluminum. The solid aluminum can restrict or prevent contacting of outer surfaces of the anode 1090 and/or the cathode 1150 (e.g., a non-carbonaceous substrate) by the electrolyte 1110. iv. Using substrates having directing features in the aluminum purification cell

[00241] One embodiment of a method for purifying aluminum includes supplying an electric current to the anode 1090. Molten material, including molten aluminum, from the molten metal pad 1100 may creep up the vertical surfaces of the anode 1090. In some embodiments, the upward creep of the molten material from the molten metal pad 1100 may occur continuously during operation of the aluminum purification cell 1000. In some embodiments, the molten material may cover essentially all of the exposed surfaces of the anode 1090. The molten aluminum on the surface of the anode 1090 may be anodized via the anode 1090, thereby producing aluminum ions. At least some of the aluminum ions may be transported through the electrolyte 1110 onto the surface of the cathode 1150. At least some of the aluminum ions may be reduced via the cathode 1150, thereby producing purified aluminum on the surface of the cathode 1150.

[00242] Without being bound by a particular mechanism or theory, one possible explanation is that the purified aluminum 1120 then creep up the surface of the cathode 1150 due to the buoyancy of the purified aluminum 1120 in the electrolyte 1110. Thus, the purified aluminum 1120 may tend to collect as a layer above the electrolyte 1110. For example, based on differences in density between the purified aluminum 1120 product, the electrolyte 1110 (e.g., bath components in the electrolyte 1110), and the molten metal pad 1100 (e.g., including the aluminum feedstock 1180 with aluminum metal, impurities, and/or densifying aids (additives to increase density)), the molten metal pad 1100 is configured with a density greater than the electrolyte 1110 such that the molten metal pad zone is configured below the electrolyte zone. [00243] In some embodiments, the anode 1090 and/or cathode 1150 can include directing features as described in Section ii. The directing features can assist the creep of the wettable material (e.g., the molten material from the molten metal pad 1100) up the anode 1090 and the cathode 1150 as described in Section ii.

EXAMPLES

[00244] Example 1 - Lab-Scale Testing

Manufacture of Porous TiEh Substrates (TiEh foams)

[00245] Four different TiEh foam samples, each of dimension of about 3-inch (H) by 2-inch (W) by 0.5 inch (D), were manufactured to have a porosity of about 10, 20, 30 and 45 PPI, respectively. The TiEh foam samples were manufactured by immersing polyurethane foams of different pore sizes in an aqueous slurry that had TiEh particles therein. The TiEh coated foams were then rolled between a set of parallel rollers with a defined gap thickness, which compressed the infiltrated foam and expelled unwanted slurry. The rolled TiEh foams were then hung in a drying oven. In some cases, the process was repeated, wherein the coated foams were re-immersed in the aqueous slurry and then air dried. The final dried TiEh foams were then sintered by heating at temperature of about 1850°C. FIG. 10 shows an example of a sintered end product. The sintered end products had continuous inter-connected pores with pore sizes of about 10, 20, 30, and 45 PPI corresponding to the respective polyurethane foam pore sizes. As shown in FIG. 10, the pore structure is an open pore structure allowing fluids to travel from one predetermined location to another predetermined location.

Water Wetting Test

[00246] As shown in FIG. 11, each of the four TiEh foam samples (of about 10, 20, 30, and 45 PPI) was wrapped in two pieces of tissue paper, one piece of tissue paper at the top of the sample and one piece of tissue paper at the middle of the sample. The bottoms of the TiEh samples were then placed in 0.25 inch of water, well below the middle part of the samples, to test the samples’ abilities to promote water mass transfer through capillary action. After about 12 hours of time, the samples were evaluated. None of the tissues in the about 10 PPI sample were damp or wet, indicating that no capillary action had occurred. In the about 20 PPI sample, the middle tissue was damp and the top issue was dry, indicating that some capillary action had occurred. In both the about 30 and 45 PPI samples, the middle and top tissues were wet, indicating that substantial capillary action had occurred.

Infiltration of TiB2 Foams with Aluminum Metal

[00247] The sintered Ti Eh foams were submerged in molten aluminum for 1 minute then air quenched. After cooling completely, each of the four TiEh foam samples was then placed into about 0.5 inches deep slots of graphite carriers of three different crucibles (Crucible #1, Crucible #2, and Crucible #3, as further described below). Each of the three crucibles was installed in a furnace and heated in argon to 900°C. A purified molten aluminum composition (pure aluminum pellets) and a molten bath composition was added to each crucible. The molten bath composition was cryolite based and included NaF, AlFs, and CaF2 constituents.

[00248] The crucibles having the four TiEh foam samples, molten aluminum, and cryolite, were held at 900°C for about 48 hours. As shown in FIG. 12, in Crucible #1, the four TiEh foam samples were completely submerged in the molten aluminum for the 48 hours. In Crucibles #2 and #3, the four TiEh foam samples were partially submerged in approximately 1 and 2 inches of molten aluminum, respectively, with the remainder of the foams being exposed to the molten bath, for the 48 hours.

[00249] After 48 hours of testing at 900°C, as shown in FIG. 13A and FIG. 13B, no corrosion was observed for the four TiB2 foam samples in any of the crucibles, indicating that the samples had been wetted by molten aluminum via capillary action facilitated by the pores of the foams. The molten aluminum protects TiB2 from being corroded by cryolite. [00250] Example 2 - Larger Lab-Scale Testing

Manufacture of TiB2 Foam Samples

[00251] Two different TiEh foam samples, each of dimension of about 16-inch (H) by 2- inch (W) by 0.5 inch (D), were manufactured by the process for the foam samples from Example 1. The sintered end product of the two TiEL foam samples had continuous interconnected pores with pore sizes of about 20 and 30 PPI corresponding to the respective polyurethane foam pore sizes.

Infiltration of TiB2 Foams with Aluminum Metal

[00252] Two untreated TiB2 foam samples were placed into about 2-inches deep slots of a graphite carrier of a crucible. Prior to being placed in the graphite carrier, a purified molten aluminum composition (pure aluminum pellets) and a molten bath composition (cryolite based and included NaF, AlFs, and CaF2 constituents) was added to each crucible, then each crucible was then installed in a furnace and heated in argon to 900°C. After heating, each of the two TiB2 foam samples was then placed in a crucible. Each crucible, having a TiB2 foam sample, molten aluminum and cryolite, was then held at 900°C. After about 10 minutes of testing, the two TiB2 foam samples were then pulled from the crucibles and molten aluminum was detected at the top of the samples. Similar to Example 1, no corrosion was observed for either of the two TiB2 foam samples, indicating that the samples had been wetted by molten aluminum about 14 inches via capillary action facilitated by the pores of the foams. The molten aluminum protects TiB2 from being corroded by cryolite.

[00253] While a number of embodiments of the present disclosure have been described, it is understood that these embodiments are illustrative only, and not restrictive, and that many modifications may become apparent to those of ordinary skill in the art. The various steps may be carried out in any desired order (and any desired steps may be added and/or any desired steps may be eliminated). For example, the features and characteristics of the directing features (e.g., slots, pores, or grooves) can be used together or alone with any of the products and/or TiB2 substrates, including an aluminum purification cell. The features and characteristics of the solid aluminum metal as described in any of the embodiments can be used in any other embodiment described herein. The exemplary embodiments of directing features and solid aluminum metal coverage are not meant to be exhaustive. The features and characteristics of the present disclosure can be combined in any manner.