Title:
Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/100583
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide an Ag alloy bonding wire for semiconductor devices which is capable of increasing the high-temperature lifetime of a wire, reducing chip damage at the time of ball joining, and improving characteristics such as ball joint strength for vehicle mounted memory device applications. The Ag alloy bonding wire for semiconductor devices according to the present invention is characterized by comprising 110 at. ppm or more but less than 500 at. ppm in total of one or more of In and Ga, 150 at. ppm or more but less than 12000 at. ppm in total of one or more of Pd and Pt, and the balance Ag and inevitable impurities.
Inventors:
OYAMADA TETSUYA (JP)
UNO TOMOHIRO (JP)
ODA DAIZO (JP)
ETO MOTOKI (JP)
OHKABE TAKUMI (JP)
UNO TOMOHIRO (JP)
ODA DAIZO (JP)
ETO MOTOKI (JP)
OHKABE TAKUMI (JP)
Application Number:
PCT/JP2020/042175
Publication Date:
May 27, 2021
Filing Date:
November 12, 2020
Export Citation:
Assignee:
NIPPON STEEL CHEMICAL & MAT CO LTD (JP)
NIPPON MICROMETAL CORP (JP)
NIPPON MICROMETAL CORP (JP)
International Classes:
H01L21/60; C22C5/06; C22F1/00; C22F1/14
Domestic Patent References:
| WO2015115241A1 | 2015-08-06 | |||
| WO2012108082A1 | 2012-08-16 | |||
| WO2002023618A1 | 2002-03-21 |
Foreign References:
| JP2016115875A | 2016-06-23 | |||
| JP2017212457A | 2017-11-30 | |||
| JPH11288962A | 1999-10-19 |
Other References:
See also references of EP 3993017A4
Attorney, Agent or Firm:
DORAIT IP LAW FIRM (JP)
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