Title:
Ag ALLOY SPUTTERING TARGET, MANUFACTURING METHOD FOR Ag ALLOY SPUTTERING TARGET, Ag ALLOY FILM, AND MANUFACTURING METHOD FOR ALLOY FILM
Document Type and Number:
WIPO Patent Application WO/2016/043183
Kind Code:
A1
Abstract:
The Ag alloy sputtering target according to the present invention has a composition in which Sn is contained in the range of 0.1 atomic% to 3.0 atomic% (inclusive), Cu is contained in the range of 1.0 atomic% to 10.0 atomic% (inclusive), and the remainder comprises Ag and unavoidable impurities. The Ag alloy film according to the present invention has a composition in which Sn is contained in the range of 0.1 atomic% to 3.0 atomic% (inclusive), Cu is contained in the range of 1.0 atomic% to 10.0 atomic% (inclusive), and the remainder comprises Ag and unavoidable impurities.
Inventors:
TOSHIMORI YUTO (JP)
NONAKA SOHEI (JP)
MATSUZAKI HIDEHARU (JP)
NONAKA SOHEI (JP)
MATSUZAKI HIDEHARU (JP)
Application Number:
PCT/JP2015/076124
Publication Date:
March 24, 2016
Filing Date:
September 15, 2015
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C22C5/06; C22F1/14; C23C14/14; C22F1/00
Foreign References:
| JP2012207445A | 2012-10-25 | |||
| JP2013216976A | 2013-10-24 |
Other References:
See also references of EP 3196333A4
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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