Title:
Ag FILM FORMING METHOD AND LOW EMISSIVITY GLASS
Document Type and Number:
WIPO Patent Application WO/2006/070727
Kind Code:
A1
Abstract:
A method for forming an Ag film to be used for a low-emissivity glass is characterized in that the Ag film is formed by a magnetron sputtering method wherein a discharge voltage of 200-350V is kept during film formation. Further, the low-emissivity glass wherein an oxide film and the Ag film (the Ag film formed by the film forming method) are alternately stacked to form 2n (n≥1) layers in total on a glass substrate and an oxide film is further stacked on the Ag film of the uppermost layer is provided.
Inventors:
Fujii, Kenji
Katou, Kazuhiro
Kobayasi, Takasi
Katou, Kazuhiro
Kobayasi, Takasi
Application Number:
PCT/JP2005/023756
Publication Date:
July 06, 2006
Filing Date:
December 26, 2005
Export Citation:
Assignee:
CENTRAL GLASS COMPANY, LIMITED (5253, Oaza Okiube Ube-sh, Yamaguchi 01, 75500, JP)
Fujii, Kenji
Katou, Kazuhiro
Kobayasi, Takasi
Fujii, Kenji
Katou, Kazuhiro
Kobayasi, Takasi
International Classes:
C23C14/06; C03C17/36; C23C14/34
Attorney, Agent or Firm:
Hashimoto, Takeshi c/o Shiga, Patent Office (Ekisaikai Bldg. 1-29, Akashi-cho, Chuo-k, Tokyo 44, 10400, JP)
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