AG ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

Title:

AG ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2021/205931

Kind Code:

A1

Abstract:

Provided is an Ag alloy bonding wire for a semiconductor device, wherein even when a mold resin having a high S content is used, good bonding reliability can be exhibited in a high temperature environment and chip damage during ball bonding can be suppressed. The Ag alloy bonding wire contains at least one element (hereinafter referred to as "first element") selected from the group consisting of Pd and Pt, and at least one element (hereinafter referred to as "second element") selected from the group consisting of P, Cr, Zr, and Mo, with the remainder comprising Ag, wherein 0.05≤x1≤3.0 and 15≤x2≤700 are satisfied, where x1 is the total concentration [at. %] of the first element and x2 is the total concentration [at. ppm] of the second element.

Inventors:

ODA DAIZO (JP)
OOKABE TAKUMI (JP)
ETO MOTOKI (JP)
ARAKI NORITOSHI (JP)
OISHI RYO (JP)
HAIBARA TERUO (JP)
UNO TOMOHIRO (JP)
OYAMADA TETSUYA (JP)

Application Number:

PCT/JP2021/013364

Publication Date:

October 14, 2021

Filing Date:

March 29, 2021

Export Citation:

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Assignee:

NIPPON MICROMETAL CORP (JP)
NIPPON STEEL CHEMICAL & MAT CO LTD (JP)

International Classes:

H01L21/60

Domestic Patent References:

WO2016006326A1

2016-01-14

Foreign References:

JP2017212457A	2017-11-30
JP2016115875A	2016-06-23
JPH11288962A	1999-10-19
JP2012169374A	2012-09-06
JP2002246542A	2002-08-30

Other References: