Title:
Al-BASED ALLOY SPUTTERING TARGET AND Cu-BASED ALLOY SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2012/105136
Kind Code:
A1
Abstract:
Satisfying the conditions of equations (1) and/or (2) makes it possible to increase the deposition rate during pre-sputtering and during subsequent sputtering onto a substrate or the like, and to minimize splashing and other sputtering defects, where P represents the total area ratio of crystal orientations <001>±15°, <011>±15°, <111>±15°, <112>±15°, and <012>±15° in the direction normal to a sputtering surface located at a depth of 1 mm or less from the outermost surface in an Al-based alloy or a Cu-based alloy sputtering target. (1) Area ratio of <011>±15° relative to P (PA): ≤40% (2) Total area ratio of <001>±15° and <111>±15° relative to P (PB): ≥20%.
Inventors:
MATSUMOTO KATSUSHI
NAKAI JUNICHI
TAKAGI TOSHIAKI
NAKAI JUNICHI
TAKAGI TOSHIAKI
Application Number:
PCT/JP2011/079460
Publication Date:
August 09, 2012
Filing Date:
December 20, 2011
Export Citation:
Assignee:
KOBE STEEL LTD (JP)
KOBELCO RES INST INC (JP)
MATSUMOTO KATSUSHI
NAKAI JUNICHI
TAKAGI TOSHIAKI
KOBELCO RES INST INC (JP)
MATSUMOTO KATSUSHI
NAKAI JUNICHI
TAKAGI TOSHIAKI
International Classes:
C23C14/34; C22C9/00; C22C21/00; H01L21/28; H01L21/285
Domestic Patent References:
| WO2011105583A1 | 2011-09-01 |
Foreign References:
| JP2008127623A | 2008-06-05 | |||
| JP2001504898A | 2001-04-10 | |||
| JP2007063621A | 2007-03-15 | |||
| JP2010013678A | 2010-01-21 |
Attorney, Agent or Firm:
UEKI, Kyuichi et al. (JP)
Hisakazu Ueki (JP)
Hisakazu Ueki (JP)
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