Title:
AL2O3 SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2018/168111
Kind Code:
A1
Abstract:
An Al2O3 sputtering target which is characterized by having a purity of 99.99 wt% or more, a relative density of from 85% to 95% (inclusive), a volume resistivity of 10 × 1014 Ω·cm or less and a dielectric loss tangent of 15 × 10-4 or more. The present invention addresses the problem of providing: an Al2O3 sputtering target which has good sputtering characteristics, especially an Al2O3 sputtering target which is capable of increasing the film formation rate without increasing the sputtering power; and a method for producing this Al2O3 sputtering target.
Inventors:
KOIDO YOSHIMASA (JP)
Application Number:
PCT/JP2017/043730
Publication Date:
September 20, 2018
Filing Date:
December 06, 2017
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; C04B35/111
Domestic Patent References:
| WO2013065337A1 | 2013-05-10 |
Foreign References:
| JPH10298743A | 1998-11-10 |
Attorney, Agent or Firm:
OGOSHI Kazuteru et al. (JP)
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