Title:
ALINN FILM, TWO-DIMENSIONAL PHOTONIC CRYSTAL RESONATOR, METHOD FOR MANUFACTURING THESE, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/159531
Kind Code:
A1
Abstract:
Provided is a technique for manufacturing a semiconductor light-emitting element for which it is possible to dramatically increase light emission efficiency to a greater degree than in the past. An AlInN film provided on a GaN epitaxial film that is formed on a substrate, wherein: the AlInN film is formed by lamination of AlInN layers; between the laminated AlInN layers, there is provided a cap layer that comprises GaN, AlN, or AlGaN, and has a thickness of 0.1-10 nm; a super lattice structure is formed; the total thickness exceeds 200 nm; and the root-mean-square height RMS is 3 nm or less. A method for forming an AlInN film, the method being such that: a step for forming an AlInN layer is repeated a plurality of times, said step involving using any of an organometallic vapor phase growth method, a molecular beam epitaxy method, and a sputtering method to form the AlInN layer to a thickness of 200 nm or less by epitaxial growth in an atmosphere of 700-850°C on a GaN epitaxial film formed on a substrate; and the AlInN layer is grown until a prescribed thickness is reached.
Inventors:
FUJIWARA YASUFUMI (JP)
INABA TOMOHIRO (JP)
INABA TOMOHIRO (JP)
Application Number:
PCT/JP2018/006965
Publication Date:
September 07, 2018
Filing Date:
February 26, 2018
Export Citation:
Assignee:
UNIV OSAKA (JP)
International Classes:
H01L21/205; H01S5/185; H01S5/323
Domestic Patent References:
| WO2014006813A1 | 2014-01-09 |
Foreign References:
| JP2011109151A | 2011-06-02 | |||
| US20140003458A1 | 2014-01-02 | |||
| JP5896454B2 | 2016-03-30 | |||
| JP5896454B2 | 2016-03-30 | |||
| JPS5378B1 | 1978-01-05 | |||
| JP2015056483A | 2015-03-23 | |||
| JP2015160752A | 2015-09-07 |
Other References:
BERGER, C. ET AL.: "Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality", JOURNAL OF CRYSTAL GROWTH, vol. 414, 15 March 2015 (2015-03-15), pages 105 - 109, XP055467863
INABA TOMOHIRO ET AL: "Controlling of Eu emission properties in Eu-doped GaN by microcavity", THE 65TH JSAP SPRING MEETING, 1 January 2016 (2016-01-01), pages 11-313, XP055619623
INABA, ET AL.: "17p-P13-17 Growth of thick AlInN layers for fabrication of GaN based nanoscale photonic devices", THE 65TH JSAP SPRING MEETING, vol. 64, 1 March 2017 (2017-03-01), pages 13 - 322, XP009516078
YUUGO KOZUKA ET AL.: "Nitride-based distributed Bragg reflectors with AlInN grown at high growth rate", LECTURE PROCEEDINGS OF THE 61ST ANNUAL SPRING MEETING OF THE INSTITUTE OF APPLIED PHYSICS, 2014, pages 15 - 135
J. -F. CARLIN ET AL.: "Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials", PHYS.STAT.SOL., vol. 242, no. 11, 2005, pages 2326 - 2344
D SIMEONOV ET AL.: "High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers", APPLIED PHYSICS LETTERS, vol. 92, 2008, pages 171102, XP012106650, doi:10.1063/1.2917452
M. BELLANGER ET AL.: "Highly Reflective GaN-Based Air-Gap Distributed Bragg Reflectors Fabricated Using AlInN Wet Etching", APPL. PHYS. EXPRESS, vol. 2, 2009, pages 12003
S ZHANG ET AL.: "Glowth mechanism of vertical compositional inhomogeneities in AlInN films", J. PHYS. D: APPL. PHYS., vol. 44, no. 075405, 2011, pages 4
See also references of EP 3591774A4
INABA TOMOHIRO ET AL: "Controlling of Eu emission properties in Eu-doped GaN by microcavity", THE 65TH JSAP SPRING MEETING, 1 January 2016 (2016-01-01), pages 11-313, XP055619623
INABA, ET AL.: "17p-P13-17 Growth of thick AlInN layers for fabrication of GaN based nanoscale photonic devices", THE 65TH JSAP SPRING MEETING, vol. 64, 1 March 2017 (2017-03-01), pages 13 - 322, XP009516078
YUUGO KOZUKA ET AL.: "Nitride-based distributed Bragg reflectors with AlInN grown at high growth rate", LECTURE PROCEEDINGS OF THE 61ST ANNUAL SPRING MEETING OF THE INSTITUTE OF APPLIED PHYSICS, 2014, pages 15 - 135
J. -F. CARLIN ET AL.: "Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials", PHYS.STAT.SOL., vol. 242, no. 11, 2005, pages 2326 - 2344
D SIMEONOV ET AL.: "High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers", APPLIED PHYSICS LETTERS, vol. 92, 2008, pages 171102, XP012106650, doi:10.1063/1.2917452
M. BELLANGER ET AL.: "Highly Reflective GaN-Based Air-Gap Distributed Bragg Reflectors Fabricated Using AlInN Wet Etching", APPL. PHYS. EXPRESS, vol. 2, 2009, pages 12003
S ZHANG ET AL.: "Glowth mechanism of vertical compositional inhomogeneities in AlInN films", J. PHYS. D: APPL. PHYS., vol. 44, no. 075405, 2011, pages 4
See also references of EP 3591774A4
Attorney, Agent or Firm:
JODAI Tetsuji et al. (JP)
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