Title:
ALKOXIDE COMPOUND, THIN FILM-FORMING MATERIAL, AND METHOD FOR MANUFACTURING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2022/009695
Kind Code:
A1
Abstract:
The present invention provides: an alkoxide compound represented by general formula (1); a thin film-forming material containing said compound; and a method for manufacturing a thin film. (In the formula, R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1-5 carbon atoms, or a fluorine atom-containing alkyl group having 1-5 carbon atoms, R3 and R4 each independently represent an alkyl group having 1-5 carbon atoms or a fluorine atom-containing alkyl group having 1-5 carbon atoms, R5 represents a hydrogen atom, a group containing a fluorine atom, or an alkyl group having 1-5 carbon atoms, R6 represents a group containing a fluorine atom, M represents a metal atom or a semimetal atom, and n represents the valence of an atom represented by M. However, if M is a copper atom, R3 and R4 each independently represent an alkyl group having 1-2 carbon atoms, and R5 represents a hydrogen atom.)
Inventors:
SAKURAI ATSUSHI (JP)
HATASE MASAKO (JP)
OKADA NANA (JP)
FUKUSHIMA RYOTA (JP)
HATASE MASAKO (JP)
OKADA NANA (JP)
FUKUSHIMA RYOTA (JP)
Application Number:
PCT/JP2021/024110
Publication Date:
January 13, 2022
Filing Date:
June 25, 2021
Export Citation:
Assignee:
ADEKA CORP (JP)
International Classes:
C07C215/08; C07F1/08; C07F7/22; C07F15/04; C07F15/06; C23C16/18; C23C16/40
Domestic Patent References:
| WO2013018413A1 | 2013-02-07 |
Foreign References:
| JP2003535839A | 2003-12-02 | |||
| KR20120102985A | 2012-09-19 | |||
| KR100675983B1 | 2007-01-30 | |||
| JP2009227674A | 2009-10-08 | |||
| US6982341B1 | 2006-01-03 | |||
| JP2006312600A | 2006-11-16 | |||
| JP2006328019A | 2006-12-07 | |||
| JP2018133569A | 2018-08-23 |
Other References:
HWANG, JEONG-MIN ET AL.: "Strategy of solution process precursors for phase change memory", POLYHEDRON, vol. 176, no. 114289, 15 January 2020 (2020-01-15), pages 1 - 6, XP086059611
CHI, YUN ET AL.: "Fluorinated aminoalkoxide Cull complexes: new CVD precursors for deposition of copper metal", JOURNAL OF MATERIALS CHEMISTRY, vol. 12, no. 12, 2002, pages 3541 - 3550, XP055898317
VERCHERE, ALEXANDRE ET AL.: "Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped Sn02 Thin Films", INORGANIC CHEMISTRY, vol. 59, no. 10, 27 April 2020 (2020-04-27), pages 7167 - 7180, XP055898319
CHI, YUN ET AL.: "Fluorinated aminoalkoxide Cull complexes: new CVD precursors for deposition of copper metal", JOURNAL OF MATERIALS CHEMISTRY, vol. 12, no. 12, 2002, pages 3541 - 3550, XP055898317
VERCHERE, ALEXANDRE ET AL.: "Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped Sn02 Thin Films", INORGANIC CHEMISTRY, vol. 59, no. 10, 27 April 2020 (2020-04-27), pages 7167 - 7180, XP055898319
Attorney, Agent or Firm:
SOGA, Michiharu et al. (JP)
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