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Title:
ALUMINA FILM SUBSTRATE AND ITS FABRICATION METHOD
Document Type and Number:
WIPO Patent Application WO/2007/029754
Kind Code:
A1
Abstract:
An alumina film substrate has its surface that is so flat that an inspection of the surface by high-speed electron diffraction results in a banded pattern. A method for fabricating the alumina film substrate comprises a step for forming an epitaxial alumina film in such a way that after the surface of the substrate including aluminum is polished so as to be flattened, the substrate is heated in an oxygen atmosphere, thereby segregating the aluminum included in the substrate to the surface. There is provided a tunnel barrier material for forming a tunnel barrier layer having a uniform thin-film thickness, having an excellent breakdown resistance so that tunnel current is made to flow without causing a dielectric breakdown even if a voltage exceeding 5 × 109 V/m is applied, and not causing tunnel current fluctuations depending on the place. The tunnel barrier material can improve the operation efficiency, reliability, and lifetime, when it is applied to various elements using tunnel currents.

Inventors:
YOSHITAKE MICHIKO (JP)
YAGYU SHINJIRO (JP)
Application Number:
PCT/JP2006/317678
Publication Date:
March 15, 2007
Filing Date:
September 06, 2006
Export Citation:
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Assignee:
NAT INST FOR MATERIALS SCIENCE (JP)
YOSHITAKE MICHIKO (JP)
YAGYU SHINJIRO (JP)
International Classes:
H01L21/314; C30B29/20; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; H01L29/78; H01L43/08; H01L43/10
Foreign References:
JPH09110594A1997-04-28
Other References:
YAMAUCHI Y. ET AL.: "Morphology and Thickness of Ultra-Thin Epitaxial Al2o3 Film on Cu-9%Al(111)", JPN. J. APPL. PHYS., vol. 42, 2003, pages 4721 - 4724, XP003010112
SONG W. ET AL.: "Oxygen Adsorption and Oxide Formation on Cu-9%Al(111) Surface Studied Using Low Energy Electron Diffraction and X-ray Photoelectron Spectroscopy", JPN. J. APPL. PHYS., vol. 42, 2003, pages 4716 - 4720, XP003010113
YAMAUCHI Y. ET AL.: "Cu-9%Al(111) Gokinjo ni Seicho shita Epitaxial Sankamaku no Hyomen Keitai to Kagaku Ketsugo Jotai", JOURNAL OF THE VACUUM SOCIETY OF JAPAN, vol. 46, no. 7, 2003, pages 546 - 549, XP003010114
YOSHITAKE M. ET AL.: "Crystallinity and thickness control of well-ordered ultra-thin Al2O3 film on NiAl(1 1 0)", SURFACE SCIENCE, vol. 511, 2002, pages L313 - K318, XP003010115
YOSHITAKE M. ET AL.: "Oxygen adsorption on Cu-9 at. %Al(111) studied by low energy electron diffraction and Auger electron spectroscopy", J. VAC. SCI. TECHNOL. A, vol. 21, no. 4, 2003, pages 1290 - 1293, XP012006424
YAMAUCHI Y. ET AL.: "Surface study and thickness control of thin Al2O3 Film on Cu-9% Al(111) single crystal", APPL. SURF. SCI., vol. 237, 2004, pages 363 - 368, XP004579371
YAMAUCHI Y. ET AL.: "Cu-9%Al(111) Kibanjo ni Seicho shita Epitaxial Al2O3-maku no Hyomen Keitai", OYO BUTSURIGAKU KANKEI RENGO KOENKAI KOEN YOKOSHU, vol. 63, 2002, pages 561, 25A-ZG-6, XP003010116
REI T. ET AL.: "NiAl(110) Kibanjo no Al2O3 Goku Usumakuatsu no Ondo Izonsei", OYO BUTSURIGAKU KANKEI RENGO KOENKAI KOEN YOKOSHU, vol. 63, 2002, pages 667, 26A-Q-3, XP003010117
YOSHITAKE M. ET AL.: "Gokuusu Epitaxial Alumina Film/Cu-9%Al(111) no Kozo", OYO BUTSURIGAKU KANKEI RENGO KOENKAI KOEN YOKOSHU, vol. 63, 2002, pages 560, 25A-ZG-5, XP003010118
YOSHITAKE M. ET AL.: "Cu-9%Al Gokin o Mochiita Gokuusu Epitaxial Sankamaku no Sakusei", OYO BUTSURIGAKU KANKEI RENGO KOENKAI KOEN YOKOSHU, vol. 49, 2002, pages 656, 29P-YD-11, XP003010119
REI T. ET AL.: "NiAl(110) Kibanjo no Al2O3 Gokuusumaku no Kesshoka Seigyo", OYO BUTSURIGAKU KANKEI RENGO KOENKAI KOEN YOKOSHU, vol. 50, 2003, pages 697, 27A-ZH-2, XP003010120
YOSHITAKE M. ET AL.: "NiAl(110) Oyobi Cu-Al(111)-jo ni Okeru Kesshosei Gokuusu Alumina Film Seicho no Mechanism", OYO BUTSURIGAKU KANKEI RENGO KOENKAI KOEN YOKOSHU, vol. 50, 2003, pages 698, 27A-ZH-4, XP003010121
Attorney, Agent or Firm:
NISHIZAWA, Toshio (11-1 Minami-Aoyama 6-chom, Minato-ku Tokyo 62, JP)
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