Title:
ALUMINUM ALLOY FILM, METHOD FOR PRODUCING SAME, AND THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2020/003667
Kind Code:
A1
Abstract:
[Problem] To provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor which is provided with said aluminum alloy film. [Solution] To solve the problem, an aluminum alloy film according to an embodiment of the present invention contains at least one first additive element selected from the group of Zr, Sc, Mo, Y, Nb, and Ti added to pure Al. The content of the first additive element is 0.01-1.0 atom%. As a result, this aluminum alloy film has excellent bending resistance and heat resistance. Furthermore, the aluminum alloy film is allowed to be etched.
Inventors:
UJIHARA YUUSUKE (JP)
KOBAYASHI MOTOSHI (JP)
AKAMATSU YASUHIKO (JP)
NAGATA TOMOHIRO (JP)
NAKAMURA RYOUTA (JP)
NITTA JYUNICHI (JP)
NAKADAI YASUO (JP)
KOBAYASHI MOTOSHI (JP)
AKAMATSU YASUHIKO (JP)
NAGATA TOMOHIRO (JP)
NAKAMURA RYOUTA (JP)
NITTA JYUNICHI (JP)
NAKADAI YASUO (JP)
Application Number:
PCT/JP2019/013570
Publication Date:
January 02, 2020
Filing Date:
March 28, 2019
Export Citation:
Assignee:
ULVAC INC (JP)
International Classes:
C22C21/00; C22F1/04; C23C14/14; C23C26/00; H01L21/28; H01L21/285; H01L29/423; H01L29/49; H01L29/786; C22F1/00
Domestic Patent References:
| WO2009123217A1 | 2009-10-08 |
Foreign References:
| JP2011190531A | 2011-09-29 | |||
| JP2005171378A | 2005-06-30 | |||
| JP2004214606A | 2004-07-29 | |||
| JP2012180540A | 2012-09-20 |
Attorney, Agent or Firm:
OMORI, Junichi (JP)
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