Title:
ALUMINUM MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICES AND METHOD FOR PRODUCING SAID ALUMINUM MEMBER
Document Type and Number:
WIPO Patent Application WO/2023/033120
Kind Code:
A1
Abstract:
This aluminum member (1) for semiconductor manufacturing devices comprises: a base material (2) comprising aluminum or an aluminum alloy; and an anodic oxidation coating film (3) formed on the base material (2). Heterogeneous particles (31), which have a long-axis diameter from 0.1-15 µm, both inclusive, and contain a metal atom other than the Al atom, are present in the anodic oxidation coating film (3). The method for producing the aluminum member (1) for semiconductor manufacturing devices comprises an anodic oxidation treatment step for forming a heterogeneous particle (31)-containing anodic oxidation coating film (3) on a base material (2) by subjecting a base material (2) that has second-phase particles in an Al matrix to an anodic oxidation treatment using an acidic electrolyte solution.
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Inventors:
NUNOMURA JUNJI (JP)
Application Number:
PCT/JP2022/033012
Publication Date:
March 09, 2023
Filing Date:
September 01, 2022
Export Citation:
Assignee:
UACJ CORP (JP)
International Classes:
C25D11/04; C22C21/02; C22C21/06; C22F1/00; C22F1/047; C22F1/05
Domestic Patent References:
| WO2020008704A1 | 2020-01-09 |
Foreign References:
| JP2005517087A | 2005-06-09 | |||
| JP2005074453A | 2005-03-24 | |||
| JP2010283342A | 2010-12-16 | |||
| JP2003171794A | 2003-06-20 | |||
| JP2008285742A | 2008-11-27 |
Attorney, Agent or Firm:
AICHI, TAKAHASHI, IWAKURA & ASSOCIATES (JP)
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