ALUMINUM NITRIDE-BASED SINTERED COMPACT AND SEMICONDUCTOR HOLDING DEVICE

Title:

ALUMINUM NITRIDE-BASED SINTERED COMPACT AND SEMICONDUCTOR HOLDING DEVICE

Document Type and Number:

WIPO Patent Application WO/2018/221504

Kind Code:

A1

Abstract:

An aluminum nitride-based sintered compact 1 includes: crystalline particles 2 of Mg-containing aluminum nitride; a composite oxide which has a Garnet type crystal structure and contains a rare earth element and Al; and a composite oxynitride that contains Mg and Al. Particles 3 of the composite oxide and particles 4 of the composite oxynitride are scattered between the crystalline particles 2 of the Mg-containing aluminum nitride. The composite oxide may contain Y. The crystalline particles 2 of the Mg-containing aluminum nitride may contain 0.1-1.0 mol% of Mg if the content of all contained metal elements is taken to be 100 mol%. A semiconductor holding device is provided with this aluminum nitride-based sintered compact 1 and an electrode 13 for electrostatic adsorption.

More Like This:

JPH075375	INDUSTRIAL APPLICABILITY [Title of Invention] A ceramic body having high thermal conductivity and a method for producing the same.
JPH0912371	BORON NITRIDE-CONTAINING MATERIAL AND ITS PRODUCTION
JPH05270918	ALUMINUM NITRIDE SINTERED COMPACT

Inventors:

WANG YUCONG (JP)
SATOU MASAHIRO (JP)
KUCHIMACHI KAZUHIRO (JP)

Application Number:

PCT/JP2018/020519

Publication Date:

December 06, 2018

Filing Date:

May 29, 2018

Export Citation:

Click for automatic bibliography generation Help

Assignee:

KYOCERA CORP (JP)

International Classes:

C04B35/581; H01L21/683

Domestic Patent References:

WO2012056807A1

2012-05-03

Foreign References:

JP2002220282A	2002-08-09
JPH09263452A	1997-10-07
JP2014058418A	2014-04-03
JPH04118883A	1992-04-20
JP2002220282A	2002-08-09

Other References: