Title:
ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/181586
Kind Code:
A1
Abstract:
[Problem] To provide: a base substrate which is capable of suppressing the generation of so-called crowns that are polycrystals grown, in the form of projections, on the ends or the outer periphery of an aluminum nitride single crystal layer; and a method for producing an aluminum nitride single crystal substrate with use of the base substrate, the method comprising a step for growing an aluminum nitride single crystal layer on the base substrate. [Solution] An aluminum nitride single crystal substrate which has a main surface on which an aluminum nitride single crystal layer is to be grown, wherein: the main surface comprises a flat surface that extends from the center side of the base substrate toward the outer periphery thereof, and an inclined surface that is connected to the flat surface at an end thereof, and is inclined with respect to the flat surface toward the back surface that is positioned on the reverse side of the flat surface; and the inclination angle of the inclined surface with respect to the plane direction of the flat surface is 10° to 50°.
Inventors:
FUKUDA MASAYUKI (JP)
HITOMI TATSUYA (JP)
YAMAMOTO REO (JP)
HITOMI TATSUYA (JP)
YAMAMOTO REO (JP)
Application Number:
PCT/JP2023/000168
Publication Date:
September 28, 2023
Filing Date:
January 06, 2023
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C30B29/38; C23C16/34; H01L21/205; H01L21/304
Domestic Patent References:
| WO2022004046A1 | 2022-01-06 | |||
| WO2022059244A1 | 2022-03-24 |
Foreign References:
| JP5446945B2 | 2014-03-19 |
Attorney, Agent or Firm:
YAMAMOTO, Noriaki et al. (JP)
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