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Title:
AMIDE SOLVENT-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2018/131562
Kind Code:
A1
Abstract:
Provided are the following: a resist underlayer film-forming composition which exhibits high etching resistance, high heat resistance and good coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing same; a method for forming a resist pattern; and a method for producing a semiconductor device. The resist underlayer film-forming composition contains a polymer and, as a solvent, a compound represented by formula (1) (in formula (1), R1, R2 and R3 each denote a hydrogen atom, an oxygen atom, a sulfur atom or an alkyl group which has 1-20 carbon atoms and which may be broken by an amide bond, and R1, R2 and R3 may be the same as, or different from, each other, and may bond to each other to form a ring structure). In the present invention, a semiconductor device is produced by: coating this composition on a semiconductor substrate that may have steps and firing so as to form a resist underlayer film; forming a resist film thereupon via an arbitrarily selected inorganic resist underlayer film; forming a resist pattern by irradiation with light or an electron beam and carrying out development; etching the underlayer film or the like using the resist pattern; and then processing the semiconductor substrate using the patterned underlayer film.

Inventors:
TOKUNAGA Hikaru (Ltd. Materials Research Laboratories 635, Sasakura, Fuchu-machi, Toyama-sh, Toyama 53, 〒9392753, JP)
HAMADA Satoshi (Ltd. Chemical Research Laboratories 10-1, Tsuboi-Nishi 2-chome, Funabashi-sh, Chiba 07, 〒2748507, JP)
HASHIMOTO Keisuke (Ltd. Materials Research Laboratories 635, Sasakura, Fuchu-machi, Toyama-sh, Toyama 53, 〒9392753, JP)
SAKAMOTO Rikimaru (Ltd. Materials Research Laboratories 635, Sasakura, Fuchu-machi, Toyama-sh, Toyama 53, 〒9392753, JP)
Application Number:
JP2018/000189
Publication Date:
July 19, 2018
Filing Date:
January 09, 2018
Export Citation:
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Assignee:
NISSAN CHEMICAL INDUSTRIES, LTD. (7-1 Kanda-Nishikicho 3-chome, Chiyoda-ku Tokyo, 54, 〒1010054, JP)
International Classes:
G03F7/11; C08G12/34; G03F7/20; G03F7/26; H01L21/027
Domestic Patent References:
WO2014156910A12014-10-02
WO2012050064A12012-04-19
WO2016159358A12016-10-06
Foreign References:
JP2003345027A2003-12-03
JP2010217306A2010-09-30
JP2005092014A2005-04-07
JP2015507212A2015-03-05
JP2016146486A2016-08-12
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (Kojimachi Business Center, 5-3-1 Kojimachi, Chiyoda-k, Tokyo 83, 〒1020083, JP)
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