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Title:
AMIDINATE LIGAND CONTAINING CHEMICAL VAPOR DEPOSITION PRECURSORS
Document Type and Number:
WIPO Patent Application WO2006012052
Kind Code:
A3
Abstract:
The present invention is directed to amidinate ligand containing precursors for use in chemical vapor deposition. More particularly, the present invention is directed to amidinate ligand containing precursors such as metalloamidinates as chemical vapor deposition precursors. Suitable precursors for chemical vapor deposition such as atmospheric pressure chemical vapor deposition (APCVD) of films of metals, metal oxides, and metal nitrides, in which the physical properties of the precursors (or films) may be controlled by modification of the precursor ligand array are provided.

Inventors:
ABRAMS MICHAEL B (US)
AUBART MARK A (US)
RUSSO DAVID A (US)
BRUCE-GERZ LINDA B (US)
Application Number:
PCT/US2005/021439
Publication Date:
April 20, 2006
Filing Date:
June 17, 2005
Export Citation:
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Assignee:
ARKEMA INC (US)
ABRAMS MICHAEL B (US)
AUBART MARK A (US)
RUSSO DAVID A (US)
BRUCE-GERZ LINDA B (US)
International Classes:
C07F1/00; C07F3/00; C07F5/00; C07F9/00; C07F11/00; C07F15/00
Other References:
INGLIS T ET AL: "Organonitrogen Groups in Metal Carbonyl Complexes. Part X Carbonylation Studies.", JOURNAL OF THE CHEMICAL SOCIETY., vol. 6, 1976, pages 562 - 564, XP008063864
LIM B S ET AL: "Atomic layer deposition of transition metals.", NATURE MATERIALS., vol. 2, November 2003 (2003-11-01), pages 749 - 754, XP002997436
LI Z ET AL: "Synthesis and Characterization of Copper(I) Amidinates as Precursor for Atomic Layer Deposition (ALD) of Copper Metal.", INORGANIC CHEMISTRY., vol. 44, no. 6, 3 February 2005 (2005-02-03), pages 1728 - 1735, XP002997437
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