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Patent Searching and Data


Title:
AMORPHOUS OXIDE SEMICONDUCTOR FILM, OXIDE SINTERED BODY, AND THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2018/143280
Kind Code:
A1
Abstract:
An oxide sintered body including: an In2O3 crystal; and a crystal A that has diffraction peaks in incident angle (2θ) ranges stipulated by (A)-(F), as observed through X-ray (Cu-Kα ray) diffraction measurement. (A): 31.0°-34.0°; (B): 36.0°-39.0°; (C): 50.0°-54.0°; (D): 53.0°-57.0°; (E): 9.0°-11.0°; (F): 19.0°-21.0°.

Inventors:
INOUE Kazuyoshi (1280, Kamiizumi Sodegaura-sh, Chiba 93, 〒2990293, JP)
SHIBATA Masatoshi (1280, Kamiizumi Sodegaura-sh, Chiba 93, 〒2990293, JP)
Application Number:
JP2018/003234
Publication Date:
August 09, 2018
Filing Date:
January 31, 2018
Export Citation:
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Assignee:
IDEMITSU KOSAN CO.,LTD. (1-1 Marunouchi 3-chome, Chiyoda-ku Tokyo, 21, 〒1008321, JP)
International Classes:
C23C14/08; C04B35/01; C23C14/34; H01L21/203; H01L29/786
Domestic Patent References:
WO2014112376A12014-07-24
Foreign References:
JP2006100857A2006-04-13
Attorney, Agent or Firm:
KINOSHITA & ASSOCIATES (3rd Floor, 26-13 Ogikubo 5-chome, Suginami-k, Tokyo 51, 〒1670051, JP)
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