AMORPHOUS OXIDE SEMICONDUCTOR FILM, OXIDE SINTERED BODY, AND THIN FILM TRANSISTOR

Title:

AMORPHOUS OXIDE SEMICONDUCTOR FILM, OXIDE SINTERED BODY, AND THIN FILM TRANSISTOR

Document Type and Number:

WIPO Patent Application WO/2018/143280

Kind Code:

A1

Abstract:

An oxide sintered body including: an In2O3 crystal; and a crystal A that has diffraction peaks in incident angle (2θ) ranges stipulated by (A)-(F), as observed through X-ray (Cu-Kα ray) diffraction measurement. (A): 31.0°-34.0°; (B): 36.0°-39.0°; (C): 50.0°-54.0°; (D): 53.0°-57.0°; (E): 9.0°-11.0°; (F): 19.0°-21.0°.

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Inventors:

INOUE KAZUYOSHI (JP)
SHIBATA MASATOSHI (JP)

Application Number:

PCT/JP2018/003234

Publication Date:

August 09, 2018

Filing Date:

January 31, 2018

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Assignee:

IDEMITSU KOSAN CO (JP)

International Classes:

C23C14/08; C04B35/01; C23C14/34; H01L21/203; H01L29/786

Domestic Patent References:

WO2014112376A1

2014-07-24

Foreign References:

JP2006100857A

2006-04-13

Attorney, Agent or Firm:

KINOSHITA & ASSOCIATES (JP)

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