Title:
ANODIC OXIDATION DEVICE, ANODIC OXIDATION METHOD, AND METHOD FOR MANUFACTURING CATHODE FOR ANODIC OXIDATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/235047
Kind Code:
A1
Abstract:
The present invention is an anodic oxidation device for forming a porous layer on a substrate of interest, the anodic oxidation device being characterized by being provided with an electrolysis vessel filled with an electrolyte solution, an anode and a cathode both placed in the electrolyte solution, and a power source for applying current between the anode and the cathode in the electrolyte solution, wherein the anode is the substrate of interest and the cathode is composed of a silicon substrate and a nitride film formed on the surface of the silicon substrate. It becomes possible to provide a cathode material which, in anodic oxidation for forming porous silicon by an electrochemical reaction in an HF solution, is resistant to the electrochemical reaction in the HF solution and does not undergo metal contamination or the like, and which is more inexpensive than the conventional cathodes. It also becomes possible to provide high-quality porous silicon at lower cost than those in the conventional methods.
Inventors:
OHTSUKI TSUYOSHI (JP)
TAMATSUKA MASARO (JP)
TAMATSUKA MASARO (JP)
Application Number:
PCT/JP2019/014575
Publication Date:
December 12, 2019
Filing Date:
April 02, 2019
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C25D17/10; C01B33/02; C25D17/00
Foreign References:
| JP2011026638A | 2011-02-10 | |||
| JPH0251268U | 1990-04-10 | |||
| JP2003129292A | 2003-05-08 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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